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CY62148BLL-70SCT PDF预览

CY62148BLL-70SCT

更新时间: 2024-11-20 20:39:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 338K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.450 INCH, PLASTIC, SOIC-32

CY62148BLL-70SCT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
Factory Lead Time:1 week风险等级:5.65
最长访问时间:70 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.447 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
认证状态:Not Qualified座面最大高度:2.997 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:11.303 mm
Base Number Matches:1

CY62148BLL-70SCT 数据手册

 浏览型号CY62148BLL-70SCT的Datasheet PDF文件第2页浏览型号CY62148BLL-70SCT的Datasheet PDF文件第3页浏览型号CY62148BLL-70SCT的Datasheet PDF文件第4页浏览型号CY62148BLL-70SCT的Datasheet PDF文件第5页浏览型号CY62148BLL-70SCT的Datasheet PDF文件第6页浏览型号CY62148BLL-70SCT的Datasheet PDF文件第7页 
CY62148B MoBL™  
4-Mbit (512K x 8) Static RAM  
is provided by an active LOW Chip Enable (CE), an active  
LOW Output Enable (OE), and three-state drivers. This device  
has an automatic power-down feature that reduces power  
consumption by more than 99% when deselected.  
Features  
• High Speed: 70 ns  
• 4.5V–5.5V operation  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A18).  
• Low active power  
— Typical active current: 2.5 mA @ f = 1 MHz  
— Typical active current: 12.5 mA @ f = fmax(70 ns)  
• Low standby current  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH for read. Under these conditions, the  
contents of the memory location specified by the address pins  
will appear on the I/O pins.  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
• CMOS for optimum speed/power  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
• Available in standard 32-lead (450-mil) SOIC, 32-lead  
TSOP II and 32-lead Reverse TSOP II packages  
The CY62148B is available in a standard 32-pin 450-mil-wide  
body width SOIC, 32-pin TSOP II, and 32-pin Reverse TSOP  
II packages.  
Functional Description  
The CY62148B is a high-performance CMOS static RAM  
organized as 512K words by 8 bits. Easy memory expansion  
Logic Block Diagram  
Pin Configuration  
Top View  
SOIC  
TSOP II  
V
A
32  
31  
30  
1
2
3
4
5
6
7
17  
CC  
A
A
A
A
A
16  
15  
14  
12  
18  
29  
28  
27  
26  
WE  
A
A
A
7
13  
6
A
A
8
A
5
9
I/O  
25  
24  
23  
22  
21  
A
A
A
0
8
9
10  
11  
12  
13  
A
4
11  
INPUT BUFFER  
3
2
OE  
A
10  
I/O  
I/O  
1
2
A
0
A
CE  
I/O  
I/O  
1
A
1
A
7
0
A
I/O  
I/O  
I/O  
4
0
1
2
20  
19  
6
A
5
6
I/O  
5
14  
15  
16  
A
I/O  
I/O  
I/O  
I/O  
I/O  
18  
17  
4
3
3
4
5
512K x 8  
ARRAY  
A
7
GND  
A
12  
A
14  
Top View  
Reverse  
TSOP II  
A
16  
A
17  
I/O  
I/O  
I/O  
GND  
I/O  
I/O  
1
17  
18  
19  
20  
21  
22  
16  
15  
14  
13  
12  
11  
10  
9
8
7
6
5
3
I/O  
6
7
POWER  
DOWN  
2
4
5
COLUMN  
DECODER  
CE  
I/O  
I/O  
I/O  
0
6
I/O  
WE  
A
0
7
A
CE  
1
OE  
23 A10  
A
2
24  
A
OE  
A11  
3
25  
26  
27  
28  
29  
30  
A
4
A
A
5
9
A
6
A
8
A
A
13  
7
A
A
A
12  
14  
16  
4
3
2
1
WE  
A
18  
A
31  
32  
15  
A
V
17  
cc  
Cypress Semiconductor Corporation  
Document #: 38-05039 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 2, 2006  
[+] Feedback  

CY62148BLL-70SCT 替代型号

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