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CY62147EV30LL-45BVXA PDF预览

CY62147EV30LL-45BVXA

更新时间： 2024-11-19 02:52:15
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 618K
描述
4-Mbit (256K x 16) Static RAM

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中文翻译

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CY62147EV30LL-45BVXA 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：VFBGA, BGA48,6X8,30
针数：48Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：7.84最长访问时间：45 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
JESD-609代码：e1长度：8 mm
内存密度：4194304 bit内存集成电路类型：STANDARD SRAM
内存宽度：16湿度敏感等级：3
功能数量：1端子数量：48
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：VFBGA封装等效代码：BGA48,6X8,30
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
电源：2.5/3.3 V认证状态：Not Qualified
座面最大高度：1 mm最大待机电流：0.000007 A
最小待机电流：1.5 V子类别：SRAMs
最大压摆率：0.02 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.2 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
宽度：6 mmBase Number Matches：1

CY62147EV30LL-45BVXA 数据手册

 浏览型号CY62147EV30LL-45BVXA的Datasheet PDF文件第2页浏览型号CY62147EV30LL-45BVXA的Datasheet PDF文件第3页浏览型号CY62147EV30LL-45BVXA的Datasheet PDF文件第4页浏览型号CY62147EV30LL-45BVXA的Datasheet PDF文件第5页浏览型号CY62147EV30LL-45BVXA的Datasheet PDF文件第6页浏览型号CY62147EV30LL-45BVXA的Datasheet PDF文件第7页 
CY62147EV30 MoBL®  
4-Mbit (256K x 16) Static RAM  
advanced circuit design to provide ultra low active current.  
This is ideal for providing More Battery Life™ (MoBL®) in  
portable applications such as cellular telephones. The device  
also has an automatic power down feature that significantly  
reduces power consumption when addresses are not toggling.  
Placing the device into standby mode reduces power  
consumption by more than 99% when deselected (CE HIGH  
or both BLE and BHE are HIGH). The input and output pins  
(IO0 through IO15) are placed in a high impedance state when:  
Features  
• Very high speed: 45 ns  
• Temperature ranges  
— Industrial: –40°C to +85°C  
— Automotive-A: –40°C to +85°C  
— Automotive-E: –40°C to +125°C  
• Wide voltage range: 2.20V–3.60V  
• Pin compatible with CY62147DV30  
• Ultra low standby power  
• Deselected (CE HIGH)  
• Outputs are disabled (OE HIGH)  
• Both Byte High Enable and Byte Low Enable are disabled  
(BHE, BLE HIGH)  
— Typical standby current: 1 µA  
— Maximum standby current: 7 µA (Industrial)  
• Ultra low active power  
• Write operation is active (CE LOW and WE LOW)  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data  
from IO pins (IO0 through IO7) is written into the location  
specified on the address pins (A0 through A17). If Byte High  
Enable (BHE) is LOW, then data from IO pins (IO8 through  
IO15) is written into the location specified on the address pins  
(A0 through A17).  
— Typical active current: 2 mA @ f = 1 MHz  
• Easy memory expansion with CE and OE features  
• Automatic power down when deselected  
• CMOS for optimum speed and power  
• Offered in Pb-free 48-ball VFBGA and 44-pin TSOPII  
packages  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.  
If Byte Low Enable (BLE) is LOW, then data from the memory  
location specified by the address pins appear on IO0 to IO7. If  
Byte High Enable (BHE) is LOW, then data from memory  
appears on IO8 to IO15. See the “Truth Table” on page 9 for a  
complete description of read and write modes.  
• Byte power down feature  
Functional Description [1]  
The CY62147EV30 is a high performance CMOS static RAM  
organized as 256K words by 16 bits. This device features  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
256K x 16  
RAM Array  
IO0–IO7  
IO8–IO15  
COLUMN DECODER  
BHE  
WE  
CE  
CE  
POWER DOWN  
CIRCUIT  
BHE  
BLE  
OE  
BLE  
Note  
1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.  
Cypress Semiconductor Corporation  
Document #: 38-05440 Rev. *E  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 6, 2007  
[+] Feedback  
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中文翻译

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CY62147EV30LL-45BVXA 替代型号

型号 品牌 替代类型 描述 数据表
CY62147EV30LL-45BVXI CYPRESS

完全替代

 4-Mbit (256K x 16) Static RAM
CY62146EV30LL-45BVXI CYPRESS

完全替代

 4-Mbit (256K x 16) Static RAM

与CY62147EV30LL-45BVXA相关器件

型号 品牌 获取价格 描述 数据表
CY62147EV30LL-45BVXI CYPRESS

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 		4-Mbit (256K x 16) Static RAM
CY62147EV30LL-45BVXI INFINEON

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 		Asynchronous SRAM
CY62147EV30LL-45BVXIT CYPRESS

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 		Standard SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM PITCH, ROHS COMPLIANT, VFBGA-48
CY62147EV30LL-45BVXIT INFINEON

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 		Asynchronous SRAM
CY62147EV30LL-45ZSXA CYPRESS

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 		4-Mbit (256K x 16) Static RAM
CY62147EV30LL-45ZSXAT CYPRESS

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 		暂无描述
CY62147EV30LL-45ZSXI CYPRESS

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 		4-Mbit (256K x 16) Static RAM
CY62147EV30LL-45ZSXI INFINEON

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 		Asynchronous SRAM
CY62147EV30LL-45ZSXIT CYPRESS

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 		Standard SRAM, 256KX16, 45ns, CMOS, PDSO44, 0.729 X 0.435 INCH, ROHS COMPLIANT, TSOP2-44
CY62147EV30LL-45ZSXIT INFINEON

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 		Asynchronous SRAM

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