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CY62147EV30LL-45B2XA PDF预览

CY62147EV30LL-45B2XA

更新时间： 2024-11-19 09:42:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
15页 507K
描述
Automotive 4-Mbit (256K x 16) Static RAM Wide voltage range: 2.20 V to 3.60 V

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CY62147EV30LL-45B2XA 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：BGA包装说明：VFBGA, BGA48,6X8,30
针数：48Reach Compliance Code：compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.5最长访问时间：45 ns
I/O 类型：COMMONJESD-30 代码：R-PBGA-B48
JESD-609代码：e1长度：8 mm
内存密度：4194304 bit内存集成电路类型：STANDARD SRAM
内存宽度：16功能数量：1
端子数量：48字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装等效代码：BGA48,6X8,30封装形状：RECTANGULAR
封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1 mm
最大待机电流：0.000007 A最小待机电流：1.5 V
子类别：SRAMs最大压摆率：0.02 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.2 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：TIN SILVER COPPER端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
处于峰值回流温度下的最长时间：40宽度：6 mm
Base Number Matches：1

CY62147EV30LL-45B2XA 数据手册

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CY62147EV30 MoBL®  
Automotive 4-Mbit (256K x 16) Static RAM  
also has an automatic power down feature that significantly  
reduces power consumption when addresses are not toggling.  
Placing the device into standby mode reduces power  
consumption by more than 99 percent when deselected (CE  
HIGH or both BLE and BHE are HIGH). The input and output pins  
(I/O0 through I/O15) are placed in a high impedance state when:  
Features  
■ Very high speed: 45 ns  
■ Temperature ranges  
❐ Automotive-A: –40 °C to +85 °C  
❐ Automotive-E: –40 °C to +125 °C  
■ Deselected (CE HIGH)  
■ Wide voltage range: 2.20 V to 3.60 V  
■ Pin compatible with CY62147DV30  
■ Ultra low standby power  
■ Outputs are disabled (OE HIGH)  
■ Both Byte High Enable and Byte Low Enable are disabled  
(BHE, BLE HIGH)  
❐ Typical standby current: 1 A  
❐ Maximum standby current: 7 A (Automotive-A)  
■ Ultra low active power  
■ Write operation is active (CE LOW and WE LOW)  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data  
from I/O pins (I/O0 through I/O7) is written into the location  
specified on the address pins (A0 through A17). If Byte High  
Enable (BHE) is LOW, then data from I/O pins (I/O8 through  
I/O15) is written into the location specified on the address pins  
(A0 through A17).  
❐ Typical active current: 2 mA (Automotive-A) at f = 1 MHz  
■ Easy memory expansion with CE [1] and OE features  
■ Automatic power down when deselected  
■ Complementary metal oxide semiconductor (CMOS) for  
optimum speed and power  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If  
Byte Low Enable (BLE) is LOW, then data from the memory  
location specified by the address pins appear on I/O0 to I/O7. If  
Byte High Enable (BHE) is LOW, then data from memory  
appears on I/O8 to I/O15. See the Truth Table on page 10 for a  
complete description of read and write modes.  
■ Available in Pb-free 48-ball very fine ball grid array (VFBGA)  
(single/dual CE option) and 44-pin thin small outline package  
(TSOP) II packages  
■ Byte power-down feature  
Functional Description  
The CY62147EV30 is a high performance CMOS static RAM  
(SRAM) organized as 256K words by 16 bits. This device  
features advanced circuit design to provide ultra low active  
current. It is ideal for providing More Battery Life™ (MoBL) in  
portable applications such as cellular telephones. The device  
For best practice recommendations, refer to the Cypress  
application note AN1064, SRAM System Guidelines.  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
256K x 16  
I/O0–I/O7  
RAM Array  
I/O8–I/O15  
COLUMN DECODER  
BHE  
WE  
CE  
POWER DOWN  
CIRCUIT  
BHE  
BLE  
[1]  
CE  
OE  
BLE  
Note  
1. BGA packaged device is offered in single CE and dual CE options. In this data sheet, for a dual CE device, CE refers to the internal logical combination of CE and  
1
CE such that when CE is LOW and CE is HIGH, CE is LOW. For all other cases CE is HIGH.  
2
1
2
Cypress Semiconductor Corporation  
Document Number: 001-66256 Rev. **  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised January 31, 2011  
[+] Feedback  
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中文翻译

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CY62147EV30LL-45B2XA 替代型号

型号 品牌 替代类型 描述 数据表
CY62147EV30LL-45B2XI CYPRESS

完全替代

 4-Mbit (256K x 16) Static RAM

与CY62147EV30LL-45B2XA相关器件

型号 品牌 获取价格 描述 数据表
CY62147EV30LL-45B2XI CYPRESS

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 		4-Mbit (256K x 16) Static RAM
CY62147EV30LL-45B2XI INFINEON

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 		Asynchronous SRAM
CY62147EV30LL-45B2XIT CYPRESS

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 		Standard SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
CY62147EV30LL-45B2XIT INFINEON

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 		Asynchronous SRAM
CY62147EV30LL-45BVI CYPRESS

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 		4-Mbit (256K x 16) Static RAM
CY62147EV30LL-45BVIT CYPRESS

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 		Standard SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, VFBGA-48
CY62147EV30LL-45BVXA CYPRESS

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 		4-Mbit (256K x 16) Static RAM
CY62147EV30LL-45BVXI CYPRESS

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 		4-Mbit (256K x 16) Static RAM
CY62147EV30LL-45BVXI INFINEON

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 		Asynchronous SRAM
CY62147EV30LL-45BVXIT CYPRESS

获取价格

 		Standard SRAM, 256KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM PITCH, ROHS COMPLIANT, VFBGA-48

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