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CY62127BV

更新时间: 2024-11-04 22:40:23
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
11页 267K
描述
64K x 16 Static RAM

CY62127BV 数据手册

 浏览型号CY62127BV的Datasheet PDF文件第2页浏览型号CY62127BV的Datasheet PDF文件第3页浏览型号CY62127BV的Datasheet PDF文件第4页浏览型号CY62127BV的Datasheet PDF文件第5页浏览型号CY62127BV的Datasheet PDF文件第6页浏览型号CY62127BV的Datasheet PDF文件第7页 
27BV  
CY62127BV  
64K x 16 Static RAM  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is  
written into the location specified on the address pins (A0  
through A15). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O9 through I/O16) is written into the location  
specified on the address pins (A0 through A15).  
Features  
• 2.7V–3.6V operation  
• CMOS for optimum speed/power  
• Low active power (70 ns, LL version)  
— 54 mW (max.) (15 mA)  
• Low standby power (70 ns, LL version)  
— 54 µW (max.) (15 µA)  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O1 to I/O8. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O9 to I/O16. See  
the truth table at the back of this data sheet for a complete  
description of read and write modes.  
• Automatic power-down when deselected  
Power down either with CE or BHE and BLE HIGH  
Independent control of Upper and Lower Bytes  
Available in 44-pin TSOP II (forward) and fBGA  
Functional Description  
The input/output pins (I/O1 through I/O16) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
The CY62127BV is a high-performance CMOS Static RAM  
organized as 65,536 words by 16 bits. This device has an au-  
tomatic power-down feature that significantly reduces power  
consumption by 99% when deselected. The device enters  
power-down mode when CE is HIGH or when CE is LOW and  
both BLE and BHE are HIGH.  
The CY62127BV is available in standard 44-pin TSOP Type II  
(forward pinout) and fBGA packages.  
Logic Block Diagram  
Pin  
Configurations  
TSOP II (Forward)  
Top View  
DATA IN DRIVERS  
44  
1
A
4
A
5
43  
42  
41  
40  
39  
38  
A
A
2
3
4
5
6
3
6
A
A
A
A
A
A
A
A
A
12  
11  
10  
A
A
2
7
OE  
A
1
A
BHE  
BLE  
I/O  
I/O  
I/O  
0
9
7
6
CE  
64K x 16  
I/O  
7
1
16  
I/O I/O  
RAM Array  
1024 X 1024  
37  
36  
35  
34  
33  
1
8
I/O  
I/O  
8
2
3
15  
14  
13  
3
2
9
I/O I/O  
10  
11  
12  
13  
9
16  
I/O  
V
SS  
I/O  
4
CC  
V
SS  
1
0
V
V
CC  
A
I/O  
32  
31  
30  
29  
28  
27  
I/O  
I/O  
5
6
7
8
12  
11  
I/O  
I/O  
I/O  
14  
15  
16  
I/O  
I/O  
10  
9
COLUMN DECODER  
WE 17  
18  
NC  
A
A
A
A
15  
14  
13  
8
19  
20  
21  
22  
26  
25  
A
9
10  
11  
A
A
BHE  
A
12  
WE  
CE  
OE  
24  
23  
NC  
NC  
BLE  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05155 Rev. **  
Revised September 6, 2001  

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