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CY62126ESL-45ZSXAT PDF预览

CY62126ESL-45ZSXAT

更新时间： 2024-09-13 13:07:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
16页 509K
描述
Standard SRAM, 64KX16, 45ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

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中文翻译

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CY62126ESL-45ZSXAT 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：TSOP2, TSOP44,.46,32
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.41风险等级：5.84
Is Samacsys：N最长访问时间：45 ns
其他特性：IT ALSO OPERATES FROM 4.5V TO 5.5VI/O 类型：COMMON
JESD-30 代码：R-PDSO-G44JESD-609代码：e3
长度：18.415 mm内存密度：1048576 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
湿度敏感等级：3功能数量：1
端子数量：44字数：65536 words
字数代码：64000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：64KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TSOP2
封装等效代码：TSOP44,.46,32封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：2.5/3.3/5 V
认证状态：Not Qualified座面最大高度：1.194 mm
最大待机电流：0.000003 A最小待机电流：1.5 V
子类别：SRAMs最大压摆率：0.016 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.2 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30宽度：10.16 mm
Base Number Matches：1

CY62126ESL-45ZSXAT 数据手册

 浏览型号CY62126ESL-45ZSXAT的Datasheet PDF文件第2页浏览型号CY62126ESL-45ZSXAT的Datasheet PDF文件第3页浏览型号CY62126ESL-45ZSXAT的Datasheet PDF文件第4页浏览型号CY62126ESL-45ZSXAT的Datasheet PDF文件第5页浏览型号CY62126ESL-45ZSXAT的Datasheet PDF文件第6页浏览型号CY62126ESL-45ZSXAT的Datasheet PDF文件第7页 
CY62126ESL MoBL®  
1-Mbit (64 K × 16) Static RAM  
1-Mbit (64  
K × 16) Static RAM  
addresses are not toggling. Placing the device into standby  
mode reduces power consumption by more than 99 percent  
when deselected (CE HIGH). The input and output pins (I/O0  
through I/O15) are placed in a high impedance state when the  
device is deselected (CE HIGH), the outputs are disabled (OE  
HIGH), both Byte High Enable and Byte Low Enable are disabled  
(BHE, BLE HIGH) or during a write operation (CE LOW and WE  
LOW).  
Features  
■ Very high speed: 45 ns  
■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V  
■ Ultra low standby power  
❐ Typical standby current: 1 A  
❐ Maximum standby current: 4 A  
To write to the device, take Chip Enable (CE) and Write Enable  
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data  
from I/O pins (I/O0 through I/O7) is written into the location  
specified on the address pins (A0 through A15). If Byte High  
Enable (BHE) is LOW, then data from I/O pins (I/O8 through  
I/O15) is written into the location specified on the address pins  
(A0 through A15).  
■ Ultra low active power  
❐ Typical active current: 1.3 mA at f = 1 MHz  
■ Easy memory expansion with CE, and OE features  
■ Automatic power down when deselected  
■ Complementary metal oxide semiconductor (CMOS) for  
To read from the device, take Chip Enable (CE) and Output  
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If  
Byte Low Enable (BLE) is LOW, then data from the memory  
location specified by the address pins appear on I/O0 to I/O7. If  
Byte High Enable (BHE) is LOW, then data from memory  
appears on I/O8 to I/O15. See the Truth Table on page 11 for a  
complete description of read and write modes.  
optimum speed and power  
■ Available in Pb-free 44-pin thin small outline package (TSOP)  
Type II package  
Functional Description  
The CY62126ESL is a high performance CMOS static RAM  
organized as 64K words by 16 bits. This device features  
advanced circuit design to provide ultra low active current. This  
is ideal for providing More Battery Life™ (MoBL) in portable  
applications. The device also has an automatic power down  
feature that significantly reduces power consumption when  
The CY62126ESL device is suitable for interfacing with  
processors that have TTL I/P levels. It is not suitable for  
processors that require CMOS I/P levels. Please see Electrical  
Characteristics on page 4 for more details and suggested  
alternatives.  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
64 K × 16  
I/O0–I/O7  
RAM Array  
I/O8–I/O15  
A2  
A1  
A0  
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
Cypress Semiconductor Corporation  
Document Number: 001-45076 Rev. *F  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised June 4, 2013  
1234567...16

中文翻译

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CY62126ESL-45ZSXAT 替代型号

型号 品牌 替代类型 描述 数据表
CY62126ESL-45ZSXI CYPRESS

完全替代

 1-Mbit (64K x 16) Static RAM

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