Datasheet > CY15V108QN-50BKXI

CY15V108QN-50BKXI

更新时间： 2024-11-07 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
32页	335K
描述
8Mb 1.8V Industrial 50MHz SPI EXCELON? F-RAM in 24-ball FBGA

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CY15V108QN-50BKXI 数据手册

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CY15B108QN, CY15V108QN

8Mb EXCELON™ LP Ferroelectric RAM

(F-RAM)

Serial (SPI), 1024K × 8, 50MHz, industrial

Features

• 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K × 8

- Virtually unlimited endurance 1000 trillion (10¹⁵) read/writes

- 151-year data retention (see “Data retention and endurance” on page 23)

- Infineon instant non-volatile write technology

- Advanced high-reliability ferroelectric process

• Fast SPI (FSPI)

- Up to 50 MHz frequency

- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

• Sophisticated write protection scheme

- Hardware protection using the Write Protect (WP) pin

- Software protection using Write Disable (WRDI) instruction

- Software block protection for 1/4, 1/2, or entire array

• Device ID and serial number

- Manufacturer ID and Product ID

- Unique Device ID

- Serial Number

• Dedicated 256-byte special sector F-RAM

- Dedicated special sector write and read

- Stored content can survive up to three standard reflow soldering cycles

• Low-power consumption

- 2.8 mA (typ) active current at 50 MHz

- 7.5 µA (typ) standby current

- 0.9 µA (typ) Deep Power Down mode current

- 0.1 µA (typ) Hibernate mode current

• Low-voltage operation

- CY15V108QN: V_DD= 1.71 V to 1.89 V

- CY15B108QN: V_DD= 1.8 V to 3.6 V

• Operating temperature

- Industrial temperature (I): -40°C to +85°C

• Package

- 24-ball fine pitch ball grid array (24-ball FBGA)

• Restriction of hazardous substances (RoHS) compliant

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

page 1 of 32

002-32517 Rev. *B

2022-05-25

12 3 4 5 6 7...32

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