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CY15B064J-SXE

更新时间： 2024-02-24 02:38:44
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路
页数 文件大小 规格书
18页 362K
描述
Memory Circuit, 8KX8, CMOS, PDSO8, SOIC-8

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CY15B064J-SXE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SON,
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.71风险等级：2.21
JESD-30 代码：R-PDSO-N8JESD-609代码：e3
长度：4.889 mm内存密度：65536 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：8字数：8192 words
字数代码：8000工作模式：SYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：8KX8封装主体材料：PLASTIC/EPOXY
封装代码：SON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
筛选级别：AEC-Q100座面最大高度：1.727 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn) - annealed端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：3.8985 mm
Base Number Matches：1

CY15B064J-SXE 数据手册

 浏览型号CY15B064J-SXE的Datasheet PDF文件第2页浏览型号CY15B064J-SXE的Datasheet PDF文件第3页浏览型号CY15B064J-SXE的Datasheet PDF文件第4页浏览型号CY15B064J-SXE的Datasheet PDF文件第5页浏览型号CY15B064J-SXE的Datasheet PDF文件第6页浏览型号CY15B064J-SXE的Datasheet PDF文件第7页 
CY15B064J  
64-Kbit (8K × 8) Serial (I2C) Automotive  
F-RAM  
64-Kbit (8K  
× 8) Serial (I2C) Automotive F-RAM  
Features  
Functional Description  
The CY15B064J is a 64-Kbit nonvolatile memory employing an  
advanced ferroelectric process. A ferroelectric random access  
memory or F-RAM is nonvolatile and performs reads and writes  
similar to a RAM. It provides reliable data retention for 121 years  
while eliminating the complexities, overhead, and system-level  
reliability problems caused by EEPROM and other nonvolatile  
memories.  
■ 64-Kbit ferroelectric random access memory (F-RAM) logically  
organized as 8K × 8  
❐ High-endurance 10 trillion (1013) read/writes  
❐ 121-year data retention (See the Data Retention and  
Endurance table)  
❐ NoDelay™ writes  
❐ Advanced high-reliability ferroelectric process  
Unlike EEPROM, the CY15B064J performs write operations at  
bus speed. No write delays are incurred. Data is written to the  
memory array immediately after each byte is successfully  
transferred to the device. The next bus cycle can commence  
without the need for data polling. In addition, the product offers  
substantial write endurance compared with other nonvolatile  
memories. Also, F-RAM exhibits much lower power during writes  
than EEPROM since write operations do not require an internally  
elevated power supply voltage for write circuits. The CY15B064J  
is capable of supporting 1013 read/write cycles, or 10 million  
times more write cycles than EEPROM.  
■ Fast 2-wire Serial interface (I2C)  
❐ Up to 1-MHz frequency  
❐ Direct hardware replacement for serial (I2C) EEPROM  
❐ Supports legacy timings for 100 kHz and 400 kHz  
■ Low power consumption  
❐ 120 A (typ) active current at 100 kHz  
❐ 6 A (typ) standby current  
■ Voltage operation: VDD = 3.0 V to 3.6 V  
■ Automotive-E temperature: –40 C to +125 C  
■ 8-pin small outline integrated circuit (SOIC) package  
■ AEC Q100 Grade 1 compliant  
These capabilities make the CY15B064J ideal for nonvolatile  
memory applications, requiring frequent or rapid writes.  
Examples range from data logging, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of EEPROM can cause data loss. The  
combination of features allows more frequent data writing with  
less overhead for the system.  
■ Restriction of hazardous substances (RoHS) compliant  
The CY15B064J provides substantial benefits to users of serial  
(I2C) EEPROM as a hardware drop-in replacement. The device  
specifications are guaranteed over an automotive-e temperature  
range of –40 C to +125 C.  
Logic Block Diagram  
8 K x 8  
F-RAM Array  
Address  
Latch  
Counter  
13  
8
Serial to Parallel  
Converter  
SDA  
Data Latch  
8
SCL  
WP  
Control Logic  
A2-A0  
Cypress Semiconductor Corporation  
Document Number: 002-10027 Rev. *B  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 12, 2017  
1234567...18

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CY15B064Q-SXE CYPRESS Memory Circuit, 8KX8, CMOS, PDSO8, SOIC-8

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