Datasheet > CY15B016Q-SXAT

CY15B016Q-SXAT

更新时间： 2024-11-02 15:19:43

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
20页	600K
描述
铁电存储器 (F-RAM)

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数据手册

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CY15B016Q-SXAT 数据手册

CY15B016Q

16-Kbit (2K × 8) Serial (SPI) Automotive-A

F-RAM

16-Kbit (2K

× 8) Serial (SPI) Automotive-A F-RAM

Features

Functional Description

■ 16-Kbit ferroelectric random access memory (F-RAM) logically

organized as 2K × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

The CY15B016Q is a 16-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system level

reliability problems caused by serial flash, EEPROM, and other

nonvolatile memories.

■ Very fast serial peripheral interface (SPI)

❐ Up to 20 MHz frequency

❐ Direct hardware replacement for serial flash and EEPROM

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

Unlike serial flash and EEPROM, the CY15B016Q performs

write operations at bus speed. No write delays are incurred. Data

is written to the memory array immediately after each byte is

successfully transferred to the device. The next bus cycle can

commence without the need for data polling. In addition, the

product offers substantial write endurance compared with other

nonvolatile memories. The CY15B016Q is capable of supporting

10¹⁴read/write cycles, or 100 million times more write cycles

than EEPROM.

■ Sophisticated write protection scheme

❐ Hardware protection using the Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

These capabilities make the CY15B016Q ideal for nonvolatile

memory applications requiring frequent or rapid writes.

Examples range from data collection, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of serial flash or EEPROM can cause data loss.

■ Low power consumption

❐ 200 A active current at 1 MHz

❐ 3 A (typ) standby current

■ Low-voltage operation: V_DD= 2.7 V to 3.6 V

■ Automotive-A temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

The CY15B016Q provides substantial benefits to users of serial

EEPROM or flash as a hardware drop-in replacement. The

CY15B016Q uses the high-speed SPI bus, which enhances the

high-speed write capability of F-RAM technology. The device

specifications are guaranteed over an automotive-a temperature

range of –40 C to +85 C.

Logic Block Diagram

Instruction Decoder

HOLD

SCK

Clock Generator

Control Logic

Write Protect

2 K x 8

F-RAM Array

Instruction Register

Address Register

Counter

Data I/O Register

Nonvolatile Status

Cypress Semiconductor Corporation

Document Number: 002-10216 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 20, 2017

12 3 4 5 6 7...20

中文翻译

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与CY15B016Q-SXAT相关器件

型号	品牌	获取价格	描述	数据表
CY15B016Q-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B016Q-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064J	CYPRESS	获取价格	64-Kbit (8K Ã 8) Serial (I2C) Automotive F-R
CY15B064J-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064J-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064J-SXE	CYPRESS	获取价格	Memory Circuit, 8KX8, CMOS, PDSO8, SOIC-8
CY15B064J-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064J-SXET	CYPRESS	获取价格	64-Kbit (8K Ã 8) Serial (I2C) Automotive F-R
CY15B064J-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064Q	CYPRESS	获取价格	64-Kbit (8K Ã 8) Serial (SPI) Automotive F-R

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