Datasheet > CY15B016J-SXAT

CY15B016J-SXAT

更新时间： 2024-11-02 15:19:15

品牌	Logo	应用领域
英飞凌 - INFINEON		存储
页数	文件大小	规格书
17页	370K
描述
铁电存储器 (F-RAM)

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CY15B016J-SXAT 数据手册

CY15B016J

16-Kbit (2K × 8) Serial (I²C) Automotive-A

F-RAM

16-Kbit (2K

× 8) Serial (I²C) Automotive-A F-RAM

Features

Functional Description

The CY15B016J is a 16-Kbit nonvolatile memory employing an

advanced ferroelectric process. A ferroelectric random access

memory or F-RAM is nonvolatile and performs reads and writes

similar to a RAM. It provides reliable data retention for 151 years

while eliminating the complexities, overhead, and system-level

reliability problems caused by EEPROM and other nonvolatile

memories.

■ 16-Kbit ferroelectric random access memory (F-RAM) logically

organized as 2K × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the CY15B016J performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. Also, F-RAM exhibits much lower power during writes

than EEPROM since write operations do not require an internally

elevated power supply voltage for write circuits. The CY15B016J

is capable of supporting 10¹⁴read/write cycles, or 100 million

times more write cycles than EEPROM.

■ Fast two-wire Serial interface (I²C)

❐ Up to 1-MHz frequency

❐ Direct hardware replacement for serial (I²C) EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Low power consumption

❐ 100 A active current at 100 kHz

❐ 3 A (typ) standby current

■ Voltage operation: V_DD= 2.7 V to 3.65 V

■ Automotive-A temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

These capabilities make the CY15B016J ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

The CY15B016J provides substantial benefits to users of serial

(I²C) EEPROM as a hardware drop-in replacement. The device

specifications are guaranteed over an automotive-a temperature

range of –40 C to +85 C.

Logic Block Diagram

2 K x 8

F-RAM Array

Address

Counter

Latch

Serial to Parallel

Converter

SDA

Data Latch

SCL

Control Logic

Cypress Semiconductor Corporation

Document Number: 002-10183 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 20, 2017

12 3 4 5 6 7...17

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与CY15B016J-SXAT相关器件

型号	品牌	获取价格	描述	数据表
CY15B016J-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B016J-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B016Q-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B016Q-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B016Q-SXE	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B016Q-SXET	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064J	CYPRESS	获取价格	64-Kbit (8K Ã 8) Serial (I2C) Automotive F-R
CY15B064J-SXA	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064J-SXAT	INFINEON	获取价格	铁电存储器 (F-RAM)
CY15B064J-SXE	CYPRESS	获取价格	Memory Circuit, 8KX8, CMOS, PDSO8, SOIC-8

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