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CY15B004Q-SXE

更新时间： 2024-11-24 19:52:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 光电二极管内存集成电路
页数 文件大小 规格书
22页 681K
描述
Memory Circuit, 512X8, CMOS, PDSO8, SOIC-8

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CY15B004Q-SXE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SOP,
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.32.00.71风险等级：2.22
JESD-30 代码：R-PDSO-G8长度：4.889 mm
内存密度：4096 bit内存集成电路类型：MEMORY CIRCUIT
内存宽度：8功能数量：1
端子数量：8字数：512 words
字数代码：512工作模式：SYNCHRONOUS
最高工作温度：125 °C最低工作温度：-40 °C
组织：512X8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
筛选级别：AEC-Q100座面最大高度：1.727 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：3 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3.8985 mmBase Number Matches：1

CY15B004Q-SXE 数据手册

 浏览型号CY15B004Q-SXE的Datasheet PDF文件第2页浏览型号CY15B004Q-SXE的Datasheet PDF文件第3页浏览型号CY15B004Q-SXE的Datasheet PDF文件第4页浏览型号CY15B004Q-SXE的Datasheet PDF文件第5页浏览型号CY15B004Q-SXE的Datasheet PDF文件第6页浏览型号CY15B004Q-SXE的Datasheet PDF文件第7页 
CY15B004Q  
4-Kbit (512 × 8) Serial (SPI) Automotive  
F-RAM  
4-Kbit (512  
× 8) Serial (SPI) Automotive F-RAM  
Features  
Functional Description  
■ 4-Kbit ferroelectric random access memory (F-RAM) logically  
organized as 512 × 8  
❐ High-endurance 10 trillion (1013) read/writes  
❐ 121-year data retention (See the Data Retention and  
Endurance table)  
❐ NoDelay™ writes  
❐ Advanced high-reliability ferroelectric process  
The CY15B004Q is a 4-Kbit nonvolatile memory employing an  
advanced ferroelectric process. A ferroelectric random access  
memory or F-RAM is nonvolatile and performs reads and writes  
similar to a RAM. It provides reliable data retention for 121 years  
while eliminating the complexities, overhead, and system level  
reliability problems caused by serial flash, EEPROM, and other  
nonvolatile memories.  
■ Very fast serial peripheral interface (SPI)  
❐ Up to 16 MHz frequency  
❐ Direct hardware replacement for serial flash and EEPROM  
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)  
Unlike serial flash and EEPROM, the CY15B004Q performs  
write operations at bus speed. No write delays are incurred. Data  
is written to the memory array immediately after each byte is  
successfully transferred to the device. The next bus cycle can  
commence without the need for data polling. In addition, the  
product offers substantial write endurance compared with other  
nonvolatile memories. The CY15B004Q is capable of supporting  
1013 read/write cycles, or 10 million times more write cycles than  
EEPROM.  
■ Sophisticated write protection scheme  
❐ Hardware protection using the Write Protect (WP) pin  
❐ Software protection using Write Disable instruction  
❐ Software block protection for 1/4, 1/2, or entire array  
These capabilities make the CY15B004Q ideal for nonvolatile  
memory applications requiring frequent or rapid writes.  
Examples range from data collection, where the number of write  
cycles may be critical, to demanding industrial controls where the  
long write time of serial flash or EEPROM can cause data loss.  
■ Low power consumption  
❐ 200 μA active current at 1 MHz  
❐ 6 μA (typ) standby current at +85 °C  
■ Low-voltage operation: VDD = 3.0 V to 3.6 V  
■ Automotive-E temperature: –40 °C to +125 °C  
■ 8-pin small outline integrated circuit (SOIC) package  
■ AEC Q100 Grade 1 compliant  
The CY15B004Q provides substantial benefits to users of serial  
EEPROM or flash as a hardware drop-in replacement. The  
CY15B004Q uses the high-speed SPI bus, which enhances the  
high-speed write capability of F-RAM technology. The device  
specifications are guaranteed over an automotive-e temperature  
range of –40 °C to +125 °C.  
■ Restriction of hazardous substances (RoHS) compliant  
Logic Block Diagram  
WP  
Instruction Decoder  
CS  
Clock Generator  
Control Logic  
HOLD  
Write Protect  
SCK  
512 x 8  
F-RAM Array  
Instruction Register  
9
8
Address Register  
Counter  
SI  
SO  
Data I/O Register  
2
Nonvolatile Status  
Register  
Errata: The Write Enable Latch (WEL) bit in the Status Register of CY15B004Q part doesn’t clear after executing the memory write (WRITE) operation at memory  
location(s) from 0x100 to 0x1FF. For more information, see Errata on page 19. Details include errata trigger conditions, scope of impact, available workarounds, and  
silicon revision applicability.  
Cypress Semiconductor Corporation  
Document Number: 002-10032 Rev. *C  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 5, 2017  
1234567...22

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