Datasheet > CY14V101QS-SE108XQ

CY14V101QS-SE108XQ

更新时间： 2024-11-06 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
55页	1240K
描述
nvSRAM (non-volatile SRAM)

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CY14V101QS

1-Mbit (128K × 8) Quad SPI nvSRAM

■ Temperature range

❐ Extended Industrial: –40 °C to 105 °C

❐ Industrial: –40 °C to 85 °C

Features

■ Density

❐ 1-Mbit (128K × 8)

■ Packages

■ Bandwidth

❐ 108-MHz high-speed interface

❐ Read and write at 54 MBps

❐ 16-pin SOIC

❐ 24-ball FBGA

■ Serial Peripheral Interface

❐ Clock polarity and phase modes 0 and 3

❐ Multi I/O option – Single SPI (SPI), Dual SPI (DPI), and Quad

SPI (QPI)

Functional Overview

The Cypress CY14V101QS combines a 1-Mbit nvSRAM with a

QPI interface. The QPI allows writing and reading the memory in

either a single (one I/O channel for one bit per clock cycle), dual

(two I/O channels for two bits per clock cycle), or quad (four I/O

channels for four bits per clock cycle) through the use of selected

opcodes.

■ High reliability

❐ Infinite read, write, and RECALL cycles

❐ One million STORE cycles to nonvolatile elements (SONOS

FLASH Quantum trap)

The memory is organized as 128Kbytes each consisting of

SRAM and nonvolatile SONOS Quantum Trap cells. The SRAM

provides infinite read and write cycles, while the nonvolatile cells

provide highly reliable storage of data. Data transfers from

SRAM to the nonvolatile cells (STORE operation) take place

automatically at power-down. On power-up, data is restored to

the SRAM from the nonvolatile cells (RECALL operation). You

can also initiate the STORE and RECALL operations through

SPI instructions.

❐ Data retention: 20 years at 85 °C

■ Read

❐ Commands: Standard, Fast, Dual I/O, and Quad I/O

❐ Modes: Burst Wrap, Continuous (XIP)

■ Write

❐ Commands: Standard, Fast, Dual I/O, and Quad I/O

❐ Modes: Burst Wrap

■ Data protection

❐ Hardware: Through Write Protect Pin (WP)

❐ Software: Through Write Disable instruction

❐ Block Protection: Status Register bits to control protection

■ Special instructions

❐ STORE/RECALL: Access data between SRAM and

Quantum Trap

❐ Serial Number: 8-byte customer selectable (OTP)

❐ Identification Number: 4-byte Manufacturer ID and Product

■ Store from SRAM to nonvolatile SONOS FLASHQuantum Trap

❐ AutoStore: Initiated automatically at power-down with a small

capacitor (V_CAP

)

❐ Software: Using SPI instruction (STORE)

❐ Hardware: HSB pin

■ Recall from nonvolatile SONOS FLASH Quantum Trap to

SRAM

❐ Auto RECALL: Initiated automatically at power-up

❐ Software: Using SPI instruction (RECALL)

■ Low-power modes

❐ Sleep: Average current = 280 µA at 85 °C

❐ Hibernate: Average current = 8 µA at 85 °C

■ Operating supply voltages

❐ Core V_CC: 2.7 V to 3.6 V

❐ I/O V_CCQ: 1.71 V to 2.0 V

Cypress Semiconductor Corporation

Document Number: 001-85257 Rev. *M

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 5, 2017

12 3 4 5 6 7...55

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与CY14V101QS-SE108XQ相关器件

型号	品牌	获取价格	描述	数据表
CY14V101QS-SE108XQT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SE108XQTR	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.413 X 0.299 INCH, 0.0932 INCH HEIGHT, LEAD FREE
CY14V101QS-SF108XI	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SF108XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101QS-SF108XIT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SF108XQ	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SF108XQ	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101QS-SF108XQT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SF108XQTR	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.413 X 0.299 INCH, 0.0932 INCH HEIGHT, LEAD FREE
CY14V104LA	CYPRESS	获取价格	4-Mbit (512 K x 8 / 256 K x 16) nvSRAM 25 ns and 45 ns access times

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