Datasheet > 存储 > SRAM> CY14C101PA-SFXIT

CY14C101PA-SFXIT

更新时间： 2024-11-06 12:20:07

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		存储内存集成电路静态存储器光电二极管时钟
页数	文件大小	规格书
44页	1379K
描述
1-Mbit (128 K Ã 8) Serial (SPI) nvSRAM with Real Time Clock

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CY14C101PA-SFXIT 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	SOIC	包装说明：	SOP, SOP16,.4
针数：	16	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.41
风险等级：	5.74	JESD-30 代码：	R-PDSO-G16
JESD-609代码：	e3	长度：	10.2865 mm
内存密度：	1048576 bit	内存集成电路类型：	NON-VOLATILE SRAM
内存宽度：	8	湿度敏感等级：	3
功能数量：	1	端子数量：	16
字数：	131072 words	字数代码：	128000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	128KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP16,.4	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	电源：	2.5 V
认证状态：	Not Qualified	座面最大高度：	2.667 mm
最大待机电流：	0.00025 A	子类别：	SRAMs
最大压摆率：	0.003 mA	最大供电电压 (Vsup)：	2.6 V
最小供电电压 (Vsup)：	2.4 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	MATTE TIN
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	7.4925 mm	Base Number Matches：	1

CY14C101PA-SFXIT 数据手册

CY14C101PA

CY14B101PA

CY14E101PA

PRELIMINARY

1-Mbit (128 K × 8) Serial (SPI) nvSRAM

with Real Time Clock

■ Write protection

❐ Hardware protection using Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

Features

■ 1-Mbit nonvolatile static random access memory (nvSRAM)

❐ Internally organized as 128 K × 8

❐ STORE to QuantumTrap nonvolatile elements initiated

automatically on power-down (AutoStore) or by using SPI

instruction (Software STORE) or HSB pin (Hardware

STORE)

❐ RECALLtoSRAMinitiatedonpower-up(PowerUpRECALL)

or by SPI instruction (Software RECALL)

❐ Automatic STORE on power-down with a small capacitor

■ High reliability

■ Low power consumption

❐ Average active current of 3 mA at 40 MHz operation

❐ Average standby mode current of 250 uA

❐ Sleep mode current of 8 uA

■ Industry standard configurations

❐ Operating voltages:

• CY14C101PA : V_CC= 2.4 V to 2.6 V

• CY14B101PA : V_CC= 2.7 V to 3.6 V

• CY14E101PA : V_CC= 4.5 V to 5.5 V

❐ Industrial temperature

❐ Infinite read, write, and RECALL cycles

❐ 1 million STORE cycles to QuantumTrap

❐ Data retention: 20 years at 85 °C

■ Real time clock (RTC)

❐ Full-featured RTC

❐ Watchdog timer

❐ Clock alarm with programmable interrupts

❐ Backup power fail indication

❐ Square wave output with programmable frequency

(1 Hz, 512 Hz, 4096 Hz, 32.768 kHz)

❐ Capacitor or battery backup for RTC

❐ Backup current of 0.45 uA (typical)

■ 40 MHz, and 104 MHz High-speed serial peripheral interface

(SPI)

❐ 40 MHz clock rate SPI write and read with zero cycle delay

❐ 104 MHz clock rate SPI write and read (with special fast read

instructions)

❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)

■ SPI access to special functions

❐ Nonvolatile STORE/RECALL

❐ 8-byte serial number

❐ 16-pin small outline integrated circuit (SOIC) package

❐ Restriction of hazardous substances (RoHS) compliant

Overview

The Cypress CY14X101PA combines a 1 Mbit nvSRAM^[1]with a

full-featured RTC in a monolithic integrated circuit with serial SPI

interface. The memory is organized as 128 K words of 8 bits

each. The embedded nonvolatile elements incorporate the

QuantumTrap technology, creating the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while the QuantumTrap cells provide highly reliable

nonvolatile storage of data. Data transfers from SRAM to the

nonvolatile elements (STORE operation) takes place

automatically at power-down. On power-up, data is restored to

the SRAM from the nonvolatile memory (RECALL operation).

You can also initiate the STORE and RECALL operations

through SPI instruction.

❐ Manufacturer ID and Product ID

❐ Sleep mode

V_RTCcapV_RTCbat

V_CCV_CAP

Serial Number

Logic Block Diagram

8 x 8

Power Control

Block

Manufacture ID/

Product ID

Quantrum Trap

128 K x 8

SLEEP

STORE

SRAM

128 K x 8

RDSN/WRSN/RDID

Memory Data

Address Control

RECALL

READ/WRITE

SPI Control Logic

Write Protection

Instruction decoder

STORE/RECALL/ASENB/ASDISB

SCK

WRSR/RDSR/WREN

RDRTC/WRTC

Status Register

X_in

INT/SQW

X_out

RTC Control Logic

Registers

Counters

Note

1. This device will be referred to as nvSRAM throughout the document.

Cypress Semiconductor Corporation

Document #: 001-54392 Rev. *C

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 21, 2011

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与CY14C101PA-SFXIT相关器件

型号	品牌	获取价格	描述	数据表
CY14C101Q	CYPRESS	获取价格	1-Mbit (128 K x 8) Serial (SPI) nvSRAM Data r
CY14C101Q_12	CYPRESS	获取价格	1-Mbit (128 K Ã 8) Serial (SPI) nvSRAM
CY14C101Q1A-S104XIT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
CY14C101Q1A-SXI	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
CY14C101Q1A-SXIT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
CY14C101Q2A-S104XI	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
CY14C101Q2A-S104XIT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
CY14C101Q2A-SXI	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
CY14C101Q3A-SF104XI	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16
CY14C101Q3A-SF104XIT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16

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