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CY14B512I-SFXI PDF预览

CY14B512I-SFXI

更新时间： 2024-11-23 09:41:07
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管时钟
页数 文件大小 规格书
41页 1809K
描述
512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock

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中文翻译

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CY14B512I-SFXI 技术参数

是否Rohs认证：符合生命周期：End Of Life
零件包装代码：SOIC包装说明：SOP, SOP16,.4
针数：16Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.41
Factory Lead Time：1 week风险等级：5.76
Is Samacsys：NJESD-30 代码：R-PDSO-G16
JESD-609代码：e3长度：10.2865 mm
内存密度：524288 bit内存集成电路类型：NON-VOLATILE SRAM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：16
字数：65536 words字数代码：64000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：64KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP16,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：260电源：3/3.3 V
认证状态：Not Qualified座面最大高度：2.667 mm
最大待机电流：0.00025 A子类别：SRAMs
最大压摆率：0.003 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：7.4925 mmBase Number Matches：1

CY14B512I-SFXI 数据手册

 浏览型号CY14B512I-SFXI的Datasheet PDF文件第2页浏览型号CY14B512I-SFXI的Datasheet PDF文件第3页浏览型号CY14B512I-SFXI的Datasheet PDF文件第4页浏览型号CY14B512I-SFXI的Datasheet PDF文件第5页浏览型号CY14B512I-SFXI的Datasheet PDF文件第6页浏览型号CY14B512I-SFXI的Datasheet PDF文件第7页 
CY14C512I  
CY14B512I, CY14E512I  
512-Kbit (64 K × 8) Serial (I2C) nvSRAM  
with Real Time Clock  
512-Kbit (64  
K × 8) Serial (I2C) nvSRAM with Real Time Clock  
■ I2C access to special functions  
❐ Nonvolatile STORE/RECALL  
❐ 8-byte serial number  
❐ Manufacturer ID and Product ID  
❐ Sleep mode  
Features  
■ 512-Kbit nonvolatile static random access memory (nvSRAM)  
❐ Internally organized as 64 K × 8  
❐ STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by using I2C  
command (Software STORE) orHSB pin (Hardware STORE)  
■ Low power consumption  
❐ Average active current of 1 mA at 3.4 MHz operation  
❐ Average standby mode current of 250 µA  
❐ Sleep mode current of 8 µA  
❐ RECALL to SRAM initiated on power-up (Power-Up  
RECALL) or by I2C command (Software RECALL)  
❐ Automatic STORE on power-down with a small capacitor  
■ Industry standard configurations  
❐ Operating voltages:  
• CY14C512I : VCC = 2.4 V to 2.6 V  
• CY14B512I : VCC = 2.7 V to 3.6 V  
• CY14E512I : VCC = 4.5 V to 5.5 V  
❐ Industrial temperature  
■ High reliability  
❐ Infinite read, write, and RECALL cycles  
❐ 1 million STORE cycles to QuantumTrap  
❐ Data retention: 20 years at 85 C  
■ Real Time Clock (RTC)  
❐ Full-featured RTC  
❐ Watchdog timer  
❐ Clock alarm with programmable interrupts  
❐ Backup power fail indication  
❐ 16-pin small outline integrated circuit (SOIC) package  
❐ Restriction of hazardous substances (RoHS) compliant  
Overview  
❐ Square wave output with programmable frequency (1 Hz,  
512 Hz, 4096 Hz, 32.768 kHz)  
The Cypress CY14C512I/CY14B512I/CY14E512I combines a  
512-Kbit nvSRAM[1] with a full-featured RTC in a monolithic  
integrated circuit with serial I2C interface. The memory is  
organized as 64 K words of 8 bits each. The embedded  
nonvolatile elements incorporate the QuantumTrap technology,  
creating the world’s most reliable nonvolatile memory. The  
SRAM provides infinite read and write cycles, while the  
QuantumTrap cells provide highly reliable nonvolatile storage of  
data. Data transfers from SRAM to the nonvolatile elements  
(STORE operation) takes place automatically at power-down.  
On power-up, data is restored to the SRAM from the nonvolatile  
memory (RECALL operation). The STORE and RECALL  
operations can also be initiated by the user through I2C  
commands.  
❐ Capacitor or battery backup for RTC  
❐ Backup current of 0.45 µA (typical)  
■ High-speed I2C interface  
❐ Industry standard 100 kHz and 400 kHz speed  
❐ Fast mode Plus 1 MHz speed  
❐ High speed 3.4 MHz  
❐ Zero cycle delay reads and writes  
■ Write protection  
❐ Hardware protection using Write Protect (WP) pin  
❐ Software block protection for one-quarter, one-half, or entire  
array  
Logic Block Diagram  
Serial Number  
8 x 8  
VRTCcap  
VCC VCAP  
VRTCbat  
Manufacture ID/  
Product ID  
Power Control  
Block  
Memory Control Register  
Command Register  
Quantrum Trap  
64 K x 8  
Sleep  
STORE  
SRAM  
64 K x 8  
Control Registers Slave  
SDA  
SCL  
A2, A1, A0  
WP  
I2C Control Logic  
Slave Address  
Decoder  
Memory  
Address and Data  
Control  
RECALL  
Memory Slave  
RTC Slave  
Xin  
RTC Control Logic  
INT/SQW  
Xout  
Registers  
Counters  
Note  
1. Serial (I C) nvSRAM will be referred to as nvSRAM throughout the datasheet.  
2
Cypress Semiconductor Corporation  
Document #: 001-64879 Rev. *B  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised May 4, 2011  
[+] Feedback  
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中文翻译

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CY14B512I-SFXI 替代型号

型号 品牌 替代类型 描述 数据表
CY14B512I-SFXIT CYPRESS

完全替代

 512-Kbit (64 K x 8) Serial (I2C) nvSRAM with Real Time Clock
CY14B512PA-SFXIT CYPRESS

类似代替

 512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC
CY14B512PA-SFXI CYPRESS

类似代替

 512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC

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 		512-Kbit (64 K x 8) Serial (SPI) nvSRAM with Real Time Clock
CY14B512PA CYPRESS

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 		512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC
CY14B512PA-SFXI CYPRESS

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 		512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC
CY14B512PA-SFXIT CYPRESS

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 		512-Kbit (64 K x 8) SPI nvSRAM with Real Time Clock Full-featured RTC

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