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CY14B101Q2-LHXIT PDF预览

CY14B101Q2-LHXIT

更新时间: 2024-01-06 02:49:54
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器
页数 文件大小 规格书
24页 908K
描述
1 Mbit (128K x 8) Serial SPI nvSRAM

CY14B101Q2-LHXIT 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DFN包装说明:0.196 INCH, ROHS COMPLIANT, MO-240, DFN-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.37Is Samacsys:N
JESD-30 代码:R-XDSO-N8JESD-609代码:e4
长度:6 mm内存密度:1048576 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:8字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:UNSPECIFIED
封装代码:VSON封装等效代码:SOLCC8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:0.8 mm最大待机电流:0.005 A
子类别:SRAMs最大压摆率:0.01 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:5 mm
Base Number Matches:1

CY14B101Q2-LHXIT 数据手册

 浏览型号CY14B101Q2-LHXIT的Datasheet PDF文件第2页浏览型号CY14B101Q2-LHXIT的Datasheet PDF文件第3页浏览型号CY14B101Q2-LHXIT的Datasheet PDF文件第4页浏览型号CY14B101Q2-LHXIT的Datasheet PDF文件第5页浏览型号CY14B101Q2-LHXIT的Datasheet PDF文件第6页浏览型号CY14B101Q2-LHXIT的Datasheet PDF文件第7页 
CY14B101Q1  
CY14B101Q2  
CY14B101Q3  
1 Mbit (128K x 8) Serial SPI nvSRAM  
Features  
Functional Overview  
The  
Cypress  
CY14B101Q1/CY14B101Q2/CY14B101Q3  
1 Mbit Nonvolatile SRAM  
combines a 1 Mbit nonvolatile static RAM with a nonvolatile  
element in each memory cell. The memory is organized as 128K  
words of 8 bits each. The embedded nonvolatile elements incor-  
porate the QuantumTrap technology, creating the world’s most  
reliable nonvolatile memory. The SRAM provides infinite read  
and write cycles, while the QuantumTrap cell provides highly  
reliable nonvolatile storage of data. Data transfers from SRAM to  
the nonvolatile elements (STORE operation) takes place  
automatically at power down. On power up, data is restored to  
the SRAM from the nonvolatile memory (RECALL operation).  
Both STORE and RECALL operations can also be triggered by  
the user.  
Internally organized as 128K x 8  
STORE to QuantumTrap Nonvolatile Elements initiated au-  
tomatically on Power Down(AutoStore)orby userusing HSB  
Pin (Hardware Store) or SPI instruction (Software Store)  
RECALL to SRAM initiated on Power Up (Power Up Recall)  
or by SPI Instruction (Software RECALL)  
Automatic STORE on Power Down with a small Capacitor  
High Reliability  
Infinite Read, Write, and RECALL Cycles  
1 Million STORE cycles to QuantumTrap  
Data Retention: 20 Years  
Configuration  
High Speed Serial Peripheral Interface (SPI)  
40 MHz Clock Rate  
Feature  
CY14B101Q1  
CY14B101Q2  
CY14B101Q3  
Supports SPI Modes 0 (0,0) and 3 (1,1)  
AutoStore  
No  
Yes  
Yes  
Yes  
Yes  
Write Protection  
Software  
STORE  
Yes  
Hardware Protection using Write Protect (WP) Pin  
Software Protection using Write Disable Instruction  
Software Block Protection for 1/4,1/2, or entire Array  
Hardware  
STORE  
No  
No  
Yes  
Low Power Consumption  
Single 3V +20%, –10% Operation  
Average VCC current of 10 mA at 40 MHz Operation  
Industry Standard Configurations  
Industrial Temperature  
CY14B101Q1 has identical pin configuration to industry stan-  
dard 8-pin NV Memory  
8-pin DFN and 16-pin SOIC Packages  
RoHS Compliant  
VCC  
VCAP  
Logic Block Diagram  
Quantum Trap  
Power Control  
128K X 8  
CS  
WP  
SCK  
Instruction decode  
Write protect  
Control logic  
STORE/RECALL  
Control  
STORE  
HSB  
SRAM ARRAY  
HOLD  
RECALL  
128K X 8  
Instruction  
register  
D0-D7  
A0-A16  
Address  
Decoder  
Data I/O register  
Status register  
SO  
SI  
Cypress Semiconductor Corporation  
Document #: 001-50091 Rev. *D  
198 Champion Court  
San Jose  
,
CA 95134-1709  
408-943-2600  
Revised January 04, 2010  

CY14B101Q2-LHXIT 替代型号

型号 品牌 替代类型 描述 数据表
CY14B101Q2A-SXI CYPRESS

完全替代

1-Mbit (128 K x 8) Serial (SPI) nvSRAM Data r
CY14B101Q1A-SXI CYPRESS

完全替代

1-Mbit (128 K x 8) Serial (SPI) nvSRAM Data r
CY14B101Q2-LHXI CYPRESS

完全替代

1 Mbit (128K x 8) Serial SPI nvSRAM

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