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CY14B101PA-SF104XI PDF预览

CY14B101PA-SF104XI

更新时间： 2024-01-23 17:07:24
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管时钟
页数 文件大小 规格书
44页 1348K
描述
1-Mbit (128 K × 8) Serial (SPI) nvSRAM with Real Time Clock

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中文翻译

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CY14B101PA-SF104XI 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SOIC包装说明：SOP, SOP16,.4
针数：16Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.41
风险等级：5.66Is Samacsys：N
JESD-30 代码：R-PDSO-G16JESD-609代码：e3
长度：10.2865 mm内存密度：1048576 bit
内存集成电路类型：NON-VOLATILE SRAM内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：16字数：131072 words
字数代码：128000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP16,.4
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3 V认证状态：Not Qualified
座面最大高度：2.667 mm最大待机电流：0.00025 A
子类别：SRAMs最大压摆率：0.003 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40宽度：7.4925 mm
Base Number Matches：1

CY14B101PA-SF104XI 数据手册

 浏览型号CY14B101PA-SF104XI的Datasheet PDF文件第2页浏览型号CY14B101PA-SF104XI的Datasheet PDF文件第3页浏览型号CY14B101PA-SF104XI的Datasheet PDF文件第4页浏览型号CY14B101PA-SF104XI的Datasheet PDF文件第5页浏览型号CY14B101PA-SF104XI的Datasheet PDF文件第6页浏览型号CY14B101PA-SF104XI的Datasheet PDF文件第7页 
CY14C101PA  
CY14B101PA  
CY14E101PA  
PRELIMINARY  
1-Mbit (128 K × 8) Serial (SPI) nvSRAM  
with Real Time Clock  
■ Write protection  
❐ Hardware protection using Write Protect (WP) pin  
❐ Software protection using Write Disable instruction  
❐ Software block protection for 1/4, 1/2, or entire array  
Features  
■ 1-Mbit nonvolatile static random access memory (nvSRAM)  
❐ Internally organized as 128 K × 8  
❐ STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by using SPI  
instruction (Software STORE) or HSB pin (Hardware  
STORE)  
❐ RECALLtoSRAMinitiatedonpower-up(PowerUpRECALL)  
or by SPI instruction (Software RECALL)  
❐ Automatic STORE on power-down with a small capacitor  
■ High reliability  
■ Low power consumption  
❐ Average active current of 3 mA at 40 MHz operation  
❐ Average standby mode current of 250 uA  
❐ Sleep mode current of 8 uA  
■ Industry standard configurations  
❐ Operating voltages:  
• CY14C101PA : VCC = 2.4 V to 2.6 V  
• CY14B101PA : VCC = 2.7 V to 3.6 V  
• CY14E101PA : VCC = 4.5 V to 5.5 V  
❐ Industrial temperature  
❐ Infinite read, write, and RECALL cycles  
❐ 1 million STORE cycles to QuantumTrap  
❐ Data retention: 20 years at 85 °C  
■ Real time clock (RTC)  
❐ Full-featured RTC  
❐ Watchdog timer  
❐ Clock alarm with programmable interrupts  
❐ Backup power fail indication  
❐ Square wave output with programmable frequency  
(1 Hz, 512 Hz, 4096 Hz, 32.768 kHz)  
❐ Capacitor or battery backup for RTC  
❐ Backup current of 0.45 uA (typical)  
■ 40 MHz, and 104 MHz High-speed serial peripheral interface  
(SPI)  
❐ 40 MHz clock rate SPI write and read with zero cycle delay  
❐ 104 MHz clock rate SPI write and read (with special fast read  
instructions)  
❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)  
■ SPI access to special functions  
❐ Nonvolatile STORE/RECALL  
❐ 8-byte serial number  
❐ 16-pin small outline integrated circuit (SOIC) package  
❐ Restriction of hazardous substances (RoHS) compliant  
Overview  
The Cypress CY14X101PA combines a 1 Mbit nvSRAM[1] with a  
full-featured RTC in a monolithic integrated circuit with serial SPI  
interface. The memory is organized as 128 K words of 8 bits  
each. The embedded nonvolatile elements incorporate the  
QuantumTrap technology, creating the world’s most reliable  
nonvolatile memory. The SRAM provides infinite read and write  
cycles, while the QuantumTrap cells provide highly reliable  
nonvolatile storage of data. Data transfers from SRAM to the  
nonvolatile elements (STORE operation) takes place  
automatically at power-down. On power-up, data is restored to  
the SRAM from the nonvolatile memory (RECALL operation).  
You can also initiate the STORE and RECALL operations  
through SPI instruction.  
❐ Manufacturer ID and Product ID  
❐ Sleep mode  
VRTCcap VRTCbat  
VCC VCAP  
Serial Number  
Logic Block Diagram  
8 x 8  
Power Control  
Block  
Manufacture ID/  
Product ID  
Quantrum Trap  
128 K x 8  
SLEEP  
STORE  
SRAM  
128 K x 8  
RDSN/WRSN/RDID  
SI  
CS  
Memory Data  
&
Address Control  
RECALL  
READ/WRITE  
SPI Control Logic  
Write Protection  
Instruction decoder  
STORE/RECALL/ASENB/ASDISB  
SCK  
WP  
SO  
WRSR/RDSR/WREN  
RDRTC/WRTC  
Status Register  
Xin  
INT/SQW  
Xout  
RTC Control Logic  
Registers  
Counters  
Note  
1. This device will be referred to as nvSRAM throughout the document.  
Cypress Semiconductor Corporation  
Document #: 001-54392 Rev. *C  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised January 21, 2011  
[+] Feedback  
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中文翻译

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