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CY14B101P-SFXIT PDF预览

CY14B101P-SFXIT

更新时间: 2024-02-14 16:31:22
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器时钟
页数 文件大小 规格书
33页 1516K
描述
1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock

CY14B101P-SFXIT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP16,.4
针数:16Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.42JESD-30 代码:R-PDSO-G16
JESD-609代码:e4长度:10.2865 mm
内存密度:1048576 bit内存集成电路类型:NON-VOLATILE SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:16
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:3/3.3 V
认证状态:Not Qualified座面最大高度:2.667 mm
最大待机电流:0.005 A子类别:SRAMs
最大压摆率:0.01 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:7.4925 mmBase Number Matches:1

CY14B101P-SFXIT 数据手册

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PRELIMINARY  
CY14B101P  
1 Mbit (128K x 8) Serial SPI nvSRAM  
with Real Time Clock  
Write Protection  
Features  
Hardware Protection using Write Protect (WP) Pin  
Software Protection using Write Disable Instruction  
Software Block Protection for 1/4, 1/2, or entire Array  
1 Mbit Nonvolatile SRAM  
Internally organized as 128K x 8  
STORE to QuantumTrap nonvolatile elements initiated  
automatically on power down (AutoStore) or by user using  
HSB pin (Hardware Store) or SPI instruction (Software Store)  
RECALL to SRAM initiated on power up (Power Up Recall)  
or by SPI Instruction (Software Recall)  
Automatic STORE on power down with a small capacitor  
Low Power Consumption  
Single 3V +20%, –10% operation  
Average VCC current of 10 mA at 40 MHz operation  
Industry Standard Configurations  
Commercial and industrial temperatures  
16-pin SOIC Package  
High Reliability  
RoHS compliant  
Infinite Read, Write, and RECALL cycles  
200,000 STORE cycles to QuantumTrap  
Data Retention: 20 Years  
Overview  
The Cypress CY14B101P combines a 1 Mbit nonvolatile static  
RAM with full featured real time clock in a monolithic integrated  
circuit with serial SPI interface. The memory is organized as  
128K words of 8 bits each. The embedded nonvolatile elements  
incorporate the QuantumTrap technology, creating the world’s  
most reliable nonvolatile memory. The SRAM provides infinite  
read and write cycles, while the QuantumTrap cells provide  
highly reliable nonvolatile storage of data. Data transfers from  
SRAM to the nonvolatile elements (STORE operation) takes  
place automatically at power down. On power up, data is  
restored to the SRAM from the nonvolatile memory (RECALL  
operation). The STORE and RECALL operations can also be  
initiated by the user.  
Real Time Clock  
Full featured Real Time Clock  
Watchdog timer  
Clock alarm with programmable interrupts  
Capacitor or battery backup for RTC  
Backup current of 300 nA  
High Speed Serial Peripheral Interface (SPI)  
40 MHz Clock rate - SRAM Memory access  
25 MHz Clock rate - RTC Memory access  
Supports SPI Modes 0 (0,0) and 3 (1,1)  
VCC  
VCAP  
Logic Block Diagram  
Quantum Trap  
128K X 8  
Power Control  
CS  
WP  
SCK  
Instruction decode  
Write protect  
Control logic  
STORE/RECALL  
Control  
STORE  
HSB  
SRAM ARRAY  
HOLD  
RECALL  
128K X 8  
Instruction  
register  
D0-D7  
A0-A16  
Xout  
Xin  
INT  
Address  
Decoder  
RTC  
MUX  
Data I/O register  
Status register  
SO  
SI  
Cypress Semiconductor Corporation  
Document #: 001-44109 Rev. *C  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 02, 2009  
[+] Feedback  

CY14B101P-SFXIT 替代型号

型号 品牌 替代类型 描述 数据表
CY14B101PA-SFXI CYPRESS

完全替代

1-Mbit (128 K × 8) Serial (SPI) nvSRAM with R
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1 Mbit (128K x 8) Serial (I2C) nvSRAM with Real Time Clock
CY14B101P-SFXI CYPRESS

完全替代

1 Mbit (128K x 8) Serial SPI nvSRAM with Real Time Clock

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