Datasheet > 存储 > SRAM> CY14B101LA

CY14B101LA

更新时间： 2024-11-05 06:51:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
24页	791K
描述
1 Mbit (128K x 8/64K x 16) nvSRAM

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中文翻译

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数据手册

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CY14B101LA 数据手册

PRELIMINARY

CY14B101LA, CY14B101NA

1 Mbit (128K x 8/64K x 16) nvSRAM

Features

Functional Description

■

20 ns, 25 ns, and 45 ns Access Times

The Cypress CY14B101LA/CY14B101NA is a fast static RAM,

with a nonvolatile element in each memory cell. The memory is

■

Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16

(CY14B101NA)

organized as 128K bytes of 8 bits each or 64K words of 16 bits

each. The embedded nonvolatile elements incorporate

QuantumTrap technology, producing the world’s most reliable

nonvolatile memory. The SRAM provides infinite read and write

cycles, while independent nonvolatile data resides in the highly

reliable QuantumTrap cell. Data transfers from the SRAM to the

nonvolatile elements (the STORE operation) takes place

automatically at power down. On power up, data is restored to

the SRAM (the RECALL operation) from the nonvolatile memory.

Both the STORE and RECALL operations are also available

under software control.

■

Hands off Automatic STORE on Power Down with only a Small

Capacitor

STORE to QuantumTrap Nonvolatile Elements Initiated by

Software, Device Pin, or AutoStore on Power Down

■

RECALL to SRAM Initiated by Software or Power Up

Infinite Read, Write, and Recall Cycles

200,000 STORE Cycles to QuantumTrap

20 year Data Retention

Single 3V +20% to -10% Operation

Commercial and Industrial Temperatures

54/44-Pin TSOP-II, 48-Pin SSOP, and 32-Pin SOIC Packages

Pb-free and RoHS Compliance

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Notes

1. Address A - A for x8 configuration and Address A - A for x16 configuration.

2. Data DQ - DQ for x8 configuration and Data DQ - DQ for x16 configuration.

3. BHE and BLE are applicable for x16 configuration only.

Cypress Semiconductor Corporation

Document #: 001-42879 Rev. *C

•

198 Champion Court

•

San Jose

CA 95134-1709

•

408-943-2600

Revised July 09, 2009

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与CY14B101LA相关器件

型号	品牌	获取价格	描述	数据表
CY14B101LA_11	CYPRESS	获取价格	1-Mbit (128 K × 8/64 K × 16) nvSRAM
CY14B101LA_1107	CYPRESS	获取价格	1 Mbit (128K x 8/64K x 16) nvSRAM
CY14B101LA_12	CYPRESS	获取价格	1-Mbit (128 K Ã 8/64 K Ã 16) nvSRAM
CY14B101LA-BA20XC	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, 20ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT,
CY14B101LA-BA20XCT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, 20ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT,
CY14B101LA-BA20XIT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, 20ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT,
CY14B101LA-BA25XCT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, 25ns, CMOS, PBGA48, 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT,
CY14B101LA-BA25XI	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, 25ns, CMOS, PBGA48, FBGA-48
CY14B101LA-BA25XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B101LA-BA25XIT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)

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