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CXTA64BKLEADFREE

更新时间： 2024-01-24 16:14:24

品牌	Logo	应用领域
CENTRAL		晶体晶体管功率双极晶体管达林顿晶体管
页数	文件大小	规格书
2页	284K
描述
Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin,

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技术参数
数据手册

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CXTA64BKLEADFREE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.5 A
配置：	DARLINGTON	最小直流电流增益 (hFE)：	10000
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.2 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	125 MHz
Base Number Matches：	1

CXTA64BKLEADFREE 数据手册

CXTA14 NPN

CXTA64 PNP

www.centralsemi.com

SURFACE MOUNT

COMPLEMENTARY SILICON

DARLINGTON TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CXTA14, CXTA64

types are complementary silicon Darlington transistors

manufactured by the epitaxial planar process, epoxy

molded in a surface mount package, designed for

applications requiring extremely high gain.

MARKING: FULL PART NUMBER

SOT-89 CASE

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

Collector-Base Voltage

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

500

1.2

Operating and Storage Junction Temperature

Thermal Resistance

-65 to +150

104

°C

J, stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

100

UNITS

=30V

=10V

CBO

EBO

100

I =100µA

CES

CE(SAT)

BE(ON)

I =100mA, I =0.1mA

1.5

2.0

=5.0V, I =100mA

=5.0V, I =10mA

10,000

20,000

125

=5.0V, I =100mA

=5.0V, I =10mA, f=100MHz

MHz

R6 (23-February 2010)

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