Datasheet > CXT5401

CXT5401

更新时间： 2024-10-15 18:09:51

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	583K
描述
SOT-89

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中文翻译

获取价格

数据手册

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CXT5401 数据手册

CXT5401

BIPOLAR TRANSISTOR (PNP)

FEATURES

 High Voltage

 Low Current

 For Switching and amplification application in high voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-160

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-150

Emitter-Base Voltage

-5

Collector Current

Collector Power Dissipation

-500

°C/W

°C

500

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=-100uA，I_E=0

I_C=-1mA，I_B=0

I =-10uA I =0

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-160

-150

-5

，

-50

nA V_CB=-120V, I_E=0

Emitter cut-off current

V_EB=-3V, I_C=0

I_EBO

V_CE=-5V, I_C=-1mA

V_CE=-5V, I_C=-10mA

V_CE=-5V, I_C=-50mA

I_C=-100mA，I_B=-1mA

I_C=-50mA，I_B=-5mA

I_C=-100mA，I_B=-1mA

I_C=-50mA，I_B=-5mA

100

DC current gain

h_FE

300

-0.2

-0.5

-1

Collector-emitter saturation voltage

V_CE(sat)

V_BE(sat)

Base-emitter saturation voltage

-1

V_CE=-10V,I_C=-10mA,f=100

Transition frequency

f_T

100

300 MHz

MHz

V_CB=-10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

V_CE=-5V,I_C=-0.2mA,R_g=10Ω

f=10

Noise figure

Hz~15.7KHz

Marking: 5401

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