Datasheet > CXK79M36C164GB

CXK79M36C164GB

更新时间： 2024-01-08 09:15:30

品牌	Logo	应用领域
索尼 - SONY		静态存储器
页数	文件大小	规格书
28页	479K
描述
18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CXK79M36C164GB 数据手册

SONY ΣRAM^™CXK79M72C164GB / CXK79M36C164GB 28/3/33/4

18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)

Preliminary

Description

The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words

by 36 bits) are high speed CMOS synchronous static RAMs with common I/O pins. They are manufactured in compliance with

the JEDEC-standard 209 pin BGA package pinouts defined for SigmaRAM^™devices. They integrate input registers, high speed

RAM, output registers, and a two-deep write buffer onto a single monolithic IC. Single Data Rate (SDR) Pipelined (PL) read

operations and Double Late Write (DLW) write operations are supported, providing a high-performance user interface. Positive

and negative output clocks are provided for applications requiring source-synchronous operation.

All address and control input signals are registered on the rising edge of the CK differential input clock.

During read operations, output data is driven valid once, from the rising edge of CK, one full cycle after the address and control

signals are registered.

During write operations, input data is registered once, on the rising edge of CK, two full cycles after the address and control

signals are registered.

Output drivers are series-terminated, and output impedance is programmable via the ZQ control pin. When an external resistor

RQ is connected between ZQ and V_SS, the impedance of the SRAM’s output drivers is set to ~RQ/5.

350 MHz operation (350 Mbps) is obtained from a single 1.8V power supply. JTAG boundary scan interface is provided using

a subset of IEEE standard 1149.1 protocol.

Features

•

3 Speed Bins

Cycle Time / Data Access Time

2.85ns / 1.7ns

-28

-3

3.0ns / 1.9ns

-33

-4

3.3ns / 1.9ns

4.0ns / 2.1ns

• Single 1.8V power supply (V_DD): 1.7V (min) to 1.95V (max)

• Dedicated output supply voltage (V_DDQ): 1.4V (min) to V_DD(max)

• HSTL-compatible I/O interface with dedicated input reference voltage (V_REF): V_DDQ/2 typical

• Common I/O

• Single Data Rate (SDR) data transfers

• Pipelined (PL) read operations

• Double Late Write (DLW) write operations

• Burst capability with internally controlled Linear Burst address sequencing

• Burst length of two, three, or four, with automatic address wrap

• Full read/write data coherency

• Byte write capability

• Differential input clocks (CK and CK)

• Data-referenced output clocks (CQ1, CQ1, CQ2, CQ2)

• Programmable output driver impedance via dedicated control pin (ZQ)

• Depth expansion capability (2 or 4 banks) via programmable chip enables (E2, E3, EP2, EP3)

• JTAG boundary scan (subset of IEEE standard 1149.1)

• 209 pin (11x19), 1mm pitch, 14mm x 22mm Ball Grid Array (BGA) package

18Mb 1x1Dp, HSTL, rev 1.3

1 / 28

June 19, 2003

12 3 4 5 6 7...28

中文翻译

下载PDF

与CXK79M36C164GB相关器件

型号	品牌	获取价格	描述	数据表
CXK79M36C164GB-28	SONY	获取价格	Standard SRAM, 512KX36, 1.7ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C164GB-33	SONY	获取价格	Standard SRAM, 512KX36, 1.9ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C164GB-44	SONY	获取价格	Standard SRAM, 512KX36, 3.2ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C164GB-5	SONY	获取价格	Standard SRAM, 512KX36, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C165GB	SONY	获取价格	18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M36C165GB-3	SONY	获取价格	Standard SRAM, 512KX36, 2ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C165GB-33	SONY	获取价格	Standard SRAM, 512KX36, 2ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C165GB-4	SONY	获取价格	Standard SRAM, 512KX36, 2.1ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C165GB-5	SONY	获取价格	Standard SRAM, 512KX36, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M72C160GB	ETC	获取价格	MEMORY-SigmaRAM 16Meg 1x1 HSTL I/O (256K x 72) (27 pages 364K Rev. 7/6/01)

与CXK79M36C164GB相关文章

LM317T数据手册解读：产品特性、应用、封装与引脚详解
2024-06-14

16
一文带你了解?DB3二极管好坏判断、参数信息、替代推荐
2024-06-14

19
LM358DR数据手册：引脚说明、电气参数及替换型号推荐
2024-06-14

12
OP07CP数据手册解读：引脚信息、电子参数
2024-06-14

17

产品中心

服务支持

精选活动

关于我们

帮助中心

CXK79M36C164GB

CXK79M36C164GB 数据手册

与CXK79M36C164GB相关器件

与CXK79M36C164GB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CXK79M36C164GB

CXK79M36C164GB 数据手册

与CXK79M36C164GB相关器件

与CXK79M36C164GB相关文章

您还可以找

您在本页遇到什么问题？