Datasheet > 存储 > SRAM> CXK79M36C162GB-4

CXK79M36C162GB-4

更新时间： 2024-02-27 10:25:36

品牌	Logo	应用领域
索尼 - SONY		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
25页	382K
描述
18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

CXK79M36C162GB-4 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	BGA, BGA209,11X19,40	针数：	209
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.92
Is Samacsys：	N	最长访问时间：	2.1 ns
其他特性：	PIPELINED ARCHITECTURE; LATE WRITE	最大时钟频率 (fCLK)：	250 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B209
JESD-609代码：	e0	长度：	22 mm
内存密度：	18874368 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	36	功能数量：	1
端子数量：	209	字数：	524288 words
字数代码：	512000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：
组织：	512KX36	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装等效代码：	BGA209,11X19,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	240	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	2.3 mm
最大待机电流：	0.25 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.75 mA
最大供电电压 (Vsup)：	1.95 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	TIN LEAD	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	10	宽度：	14 mm
Base Number Matches：	1

CXK79M36C162GB-4 数据手册

SONY ΣRAM^™

CXK79M36C162GB

33/4/5

18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)

Preliminary

Description

The CXK79M36C162GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in com-

pliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM^™devices. It integrates input registers,

high speed RAM, output registers, and a two-deep write buffer onto a single monolithic IC. Double Data Rate (DDR) Pipelined

(PL) read operations and Late Write (LW) write operations are supported, providing a high-performance user interface. Positive

and negative output clocks are provided for applications requiring source-synchronous operation.

All address and control input signals are registered on the rising edge of the CK differential input clock.

During read operations, output data is driven valid twice, from both the rising and falling edges of CK, beginning one full cycle

after the address and control signals are registered.

During write operations, input data is registered twice, on both the rising and falling edges of CK, beginning one full cycle after

the address and control signals are registered.

Because two pieces of data are always transferred during read and write operations, the least significant address bit of the in-

ternal memory array is not available as an external address pin to this device. Consequently, the number of external address pins

available to the device is one less than the specified depth of the device (i.e. the 512Kb x 36 device has 18, not 19, external

address pins). And, the user cannot choose the order in which the two pieces of data are read. Read data is always provided in

the same order in which it is written.

Output drivers are series-terminated, and output impedance is programmable via the ZQ control pin. When an external resistor

RQ is connected between ZQ and V_SS, the impedance of the SRAM’s output drivers is set to ~RQ/5.

300 MHz operation (600 Mbps) is obtained from a single 1.8V power supply. JTAG boundary scan interface is provided using

a subset of IEEE standard 1149.1 protocol.

Features

•

3 Speed Bins

Cycle Time / Data Access Time

3.3ns / 1.8ns

-33

-4

4.0ns / 2.1ns

-5

5.0ns / 2.3ns

• Single 1.8V power supply (V_DD): 1.7V (min) to 1.95V (max)

• Dedicated output supply voltage (V_DDQ): 1.4V (min) to V_DD(max)

• HSTL-compatible I/O interface with dedicated input reference voltage (V_REF): V_DDQ/2 typical

• Common I/O

• Double Data Rate (DDR) data transfers

• Pipelined (PL) read operations

• Late Write (LW) write operations

• Burst capability with internally controlled Linear Burst address sequencing

• Burst length of two or four, with automatic address wrap

• Full read/write data coherency

• Differential input clocks (CK and CK)

• Data-referenced output clocks (CQ1, CQ1, CQ2, CQ2)

• Programmable output driver impedance via dedicated control pin (ZQ)

• Depth expansion capability (2 or 4 banks) via programmable chip enables (E2, E3, EP2, EP3)

• JTAG boundary scan (subset of IEEE standard 1149.1)

• 209 pin (11x19), 1mm pitch, 14mm x 22mm Ball Grid Array (BGA) package

18Mb 1x2Lp, HSTL, rev 1.1

1 / 25

November 8, 2002

12 3 4 5 6 7...25

中文翻译

下载PDF

与CXK79M36C162GB-4相关器件

型号	品牌	获取价格	描述	数据表
CXK79M36C162GB-44	SONY	获取价格	Standard SRAM, 512KX36, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C162GB-5	SONY	获取价格	18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
CXK79M36C163GB	ETC	获取价格	MEMORY-SigmaRAM 16Meg 1x2 LVCMOX I/O (512K x 36) (25 pages 360K Rev. 7/6/01)
CXK79M36C163GB-4	SONY	获取价格	Standard SRAM, 512KX36, 2.1ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C163GB-44	SONY	获取价格	Standard SRAM, 512KX36, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C163GB-5	SONY	获取价格	Standard SRAM, 512KX36, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C164GB	SONY	获取价格	18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
CXK79M36C164GB-28	SONY	获取价格	Standard SRAM, 512KX36, 1.7ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C164GB-33	SONY	获取价格	Standard SRAM, 512KX36, 1.9ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
CXK79M36C164GB-44	SONY	获取价格	Standard SRAM, 512KX36, 3.2ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209

与CXK79M36C162GB-4相关文章

LM317T数据手册解读：产品特性、应用、封装与引脚详解
2024-06-14

16
一文带你了解?DB3二极管好坏判断、参数信息、替代推荐
2024-06-14

19
LM358DR数据手册：引脚说明、电气参数及替换型号推荐
2024-06-14

12
OP07CP数据手册解读：引脚信息、电子参数
2024-06-14

17

产品中心

服务支持

精选活动

关于我们

帮助中心

CXK79M36C162GB-4

CXK79M36C162GB-4 技术参数

CXK79M36C162GB-4 数据手册

与CXK79M36C162GB-4相关器件

与CXK79M36C162GB-4相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CXK79M36C162GB-4

CXK79M36C162GB-4 技术参数

CXK79M36C162GB-4 数据手册

与CXK79M36C162GB-4相关器件

与CXK79M36C162GB-4相关文章

您还可以找

您在本页遇到什么问题？