是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | BGA, BGA119,7X17,50 |
针数: | 119 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 6 ns |
其他特性: | SELF TIMED WRITE; ALSO CONFIGURABLE AS 64K X 18 | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B119 | JESD-609代码: | e0 |
内存密度: | 1179648 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 9 | 功能数量: | 1 |
端子数量: | 119 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 128KX9 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装等效代码: | BGA119,7X17,50 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3.3 V |
认证状态: | Not Qualified | 最大待机电流: | 0.15 A |
最小待机电流: | 3.14 V | 子类别: | SRAMs |
最大压摆率: | 0.22 mA | 最大供电电压 (Vsup): | 3.45 V |
最小供电电压 (Vsup): | 3.15 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 1.27 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CXK77V1840GB-10 | SONY |
获取价格 |
Standard SRAM, 512KX9, 5.5ns, CMOS, PBGA119, 0.050 INCH PITCH, PLASTIC, BGA-119 | |
CXK77V1840GB-12 | SONY |
获取价格 |
Standard SRAM, 512KX9, 7.5ns, CMOS, PBGA119, 0.050 INCH PITCH, PLASTIC, BGA-119 | |
CXK77V1840GB-8 | SONY |
获取价格 |
Standard SRAM, 512KX9, 4ns, CMOS, PBGA119, 0.050 INCH PITCH, PLASTIC, BGA-119 | |
CXK77V3211Q | SONY |
获取价格 |
32768-word by 32-bit High Speed Synchronous Static RAM | |
CXK77V3211Q11 | ETC |
获取价格 |
x32 Fast Synchronous SRAM | |
CXK77V3211Q-11 | SONY |
获取价格 |
Standard SRAM, 32KX32, 11ns, MOS, PQFP100, QFP-100 | |
CXK77V3211Q-12 | SONY |
获取价格 |
32768-word by 32-bit High Speed Synchronous Static RAM | |
CXK77V3211Q-14 | SONY |
获取价格 |
32768-word by 32-bit High Speed Synchronous Static RAM | |
CXK77V3211R-14 | ETC |
获取价格 |
x32 Fast Synchronous SRAM | |
CXK77V3211R-14L | ETC |
获取价格 |
x32 Fast Synchronous SRAM |