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CXK77S18R80AGB-4 PDF预览

CXK77S18R80AGB-4

更新时间： 2024-11-08 21:08:23
品牌 Logo 应用领域
索尼 - SONY 静态存储器内存集成电路
页数 文件大小 规格书
26页 257K
描述
Late-Write SRAM, 512KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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中文翻译

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CXK77S18R80AGB-4 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：BGA
包装说明：BGA, BGA119,7X17,50针数：119
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.92
最长访问时间：2 nsI/O 类型：COMMON
JESD-30 代码：R-PBGA-B119JESD-609代码：e0
长度：22 mm内存密度：9437184 bit
内存集成电路类型：LATE-WRITE SRAM内存宽度：18
功能数量：1端子数量：119
字数：524288 words字数代码：512000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：组织：512KX18
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：BGA封装等效代码：BGA119,7X17,50
封装形状：RECTANGULAR封装形式：GRID ARRAY
并行/串行：PARALLEL峰值回流温度（摄氏度）：240
电源：1.5/1.8,3.3 V认证状态：Not Qualified
座面最大高度：2.5 mm最大待机电流：0.065 A
最小待机电流：3.14 V子类别：SRAMs
最大压摆率：0.65 mA最大供电电压 (Vsup)：3.47 V
最小供电电压 (Vsup)：3.13 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：1.27 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：10
宽度：14 mmBase Number Matches：1

CXK77S18R80AGB-4 数据手册

 浏览型号CXK77S18R80AGB-4的Datasheet PDF文件第2页浏览型号CXK77S18R80AGB-4的Datasheet PDF文件第3页浏览型号CXK77S18R80AGB-4的Datasheet PDF文件第4页浏览型号CXK77S18R80AGB-4的Datasheet PDF文件第5页浏览型号CXK77S18R80AGB-4的Datasheet PDF文件第6页浏览型号CXK77S18R80AGB-4的Datasheet PDF文件第7页 
SONYÒ CXK77S36R80AGB / CXK77S18R80AGB  
33/36/4  
8Mb Late Write HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18 Organization)  
Preliminary  
Description  
The CXK77S36R80AGB (organized as 262,144 words by 36 bits) and the CXK77S18R80AGB (organized as 524,288 words  
by 18 bits) are high speed CMOS synchronous static RAMs with common I/O pins. These synchronous SRAMs integrate input  
registers, high speed RAM, output registers, and a one-deep write buffer onto a single monolithic IC. Register - Register (R-R)  
read operations and Late Write (LW) are supported, providing a high-performance user interface.  
All address and control input signals except G (Output Enable) and ZZ (Sleep Mode) are registered on the rising edge of K  
(Input Clock).  
During read operations, output data is driven valid from the rising edge of K, one full clock cycle after the address is registered.  
During write operations, input data is registered on the rising edge of K, one full clock cycle after the address is registered.  
The output drivers are series terminated, and the output impedance is programmable through an external impedance matching  
resistor RQ. By connecting RQ between ZQ and V , the output impedance of all DQ pins can be precisely controlled.  
SS  
Sleep (power down) mode control is provided through the asynchronous ZZ input. 300 MHz operation is obtained from a single  
3.3V power supply. JTAG boundary scan interface is provided using a subset of IEEE standard 1149.1 protocol.  
Features  
•
3 Speed Bins  
-33 (-33A)  
Cycle Time / Access Time  
3.3ns / 1.7ns (1.6ns)  
3.6ns / 1.8ns  
-36  
-4 (-4A)  
4.0ns / 2.0ns (1.8ns)  
•
•
•
•
•
•
•
•
•
•
•
•
•
Single 3.3V power supply (V ): 3.3V ± 5%  
DD  
Register - Register (R-R) read operations  
Late Write (LW), fully coherent write operations  
Byte Write capability  
Two cycle deselect  
Differential input clocks (K/K)  
Asynchronous output enable (G)  
Dedicated output supply voltage (V  
): 1.4V (min) to 2.0V (max)  
DDQ  
HSTL-compatible I/O interface with dedicated input reference voltage (V ): V  
/2 typical  
DDQ  
REF  
Programmable impedance output drivers  
Sleep (power down) mode via dedicated mode pin (ZZ)  
JTAG boundary scan (subset of IEEE standard 1149.1)  
119 pin (7x17), 1.27mm pitch, 14mm x 22mm Ball Grid Array (BGA) package  
8Mb, Sync LW, R-R, HSTL, rev 1.6  
1 / 26  
February 5, 2001  
1234567...26

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与CXK77S18R80AGB-4相关器件

型号 品牌 获取价格 描述 数据表
CXK77S18R80AGB-4A SONY

获取价格

 		Late-Write SRAM, 512KX18, 1.8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36L80AGB-4 SONY

获取价格

 		Late-Write SRAM, 256KX36, 3.9ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36L80AGB-42 SONY

获取价格

 		Late-Write SRAM, 256KX36, 4.2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36L80AGB-43 SONY

获取价格

 		Late-Write SRAM, 256KX36, 4.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36L80AGB-43A SONY

获取价格

 		Late-Write SRAM, 256KX36, 4.4ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36L80AGB-43B SONY

获取价格

 		Late-Write SRAM, 256KX36, 4.3ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36L80AGB-44 SONY

获取价格

 		Late-Write SRAM, 256KX36, 4.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36L80AGB-4A SONY

获取价格

 		Late-Write SRAM, 256KX36, 3.8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36R80AGB-33 SONY

获取价格

 		Late-Write SRAM, 256KX36, 1.7ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77S36R80AGB-33A SONY

获取价格

 		Late-Write SRAM, 256KX36, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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