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CXK591000TM-10LL PDF预览

CXK591000TM-10LL

更新时间: 2024-11-05 22:08:23
品牌 Logo 应用领域
索尼 - SONY 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
13页 273K
描述
131,072-word X 9-bit High Speed CMOS Static RAM

CXK591000TM-10LL 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP1, TSSOP32,.8,20针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.82
Is Samacsys:N最长访问时间:100 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:1179648 bit
内存集成电路类型:STANDARD SRAM内存宽度:9
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX9
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.000024 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.07 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

CXK591000TM-10LL 数据手册

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CXK591000TM/YM/M -55LL/70LL/10LL  
131,072-word × 9-bit High Speed CMOS Static RAM  
For the availability of this product, please contact the sales office.  
Description  
CXK591000TM  
CXK591000YM  
The CXK591000TM/YM/M is a high speed CMOS  
static RAM organized as 131,072-words by 9 bits.  
32 pin TSOP (PIastic)  
32 pin TSOP (PIastic)  
A
polysilicon TFT cell technology realized  
extremely low stand-by current and higher data  
retention stability.  
Special feature are low power consumption and  
high speed.  
The CXK591000TM/YM/M is a suitable RAM for  
portable equipment with battery back up and parity  
bit.  
CXK591000M  
32 pin SOP (PIastic)  
Features  
Fast access time  
CXK591000TM/YM/M  
-55LL  
(Access time)  
55ns (Max.)  
70ns (Max.)  
100ns (Max.)  
-70LL  
-10LL  
Low standby current  
CXK591000TM/YM/M  
-55LL/70LL/10LL  
Low data retention current  
CXK591000TM/YM/M  
-55LL/70LL/10LL  
Single +5V supply: 5V ± 10%.  
Block Diagram  
24µA (Max.)  
14µA (Max.)  
A10  
A11  
A9  
A8  
VCC  
Memory  
Matrix  
A13  
Row  
Decoder  
Buffer  
A15  
A16  
A14  
A12  
A7  
1024 × 1152  
GND  
Low voltage date retention: 2.0V (Min.)  
Broad package line-up  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
CXK591000TM/YM  
I /O Gate  
Column  
Decoder  
8mm × 20mm 32 pin TSOP Package  
525mil 32 pin SOP  
Buffer  
Buffer  
CXK591000M  
Package  
OE  
Function  
WE  
131072 word × 9 bit static RAM  
I /O Buffer  
I/O1 I/O9  
CE1  
CE2  
Structure  
Silicon gate CMOS IC  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E93X06-PS  

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