是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP28,.6 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
最长访问时间: | 120 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PDIP-T28 | JESD-609代码: | e0 |
内存密度: | 65536 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 端子数量: | 28 |
字数: | 8192 words | 字数代码: | 8000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 8KX8 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP28,.6 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 最大待机电流: | 0.00008 A |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.055 mA | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CXK5864PN-12LL | SONY |
获取价格 |
Standard SRAM, 8KX8, 120ns, CMOS, PDIP28 | |
CXK5864PN-15 | ETC |
获取价格 |
x8 SRAM | |
CXK5864PN-15L | SONY |
获取价格 |
Standard SRAM, 8KX8, 150ns, CMOS, PDIP28 | |
CXK5864PN-15LL | SONY |
获取价格 |
Standard SRAM, 8KX8, 150ns, CMOS, PDIP28 | |
CXK591000M | SONY |
获取价格 |
131,072-word X 9-bit High Speed CMOS Static RAM | |
CXK591000M-10LL | SONY |
获取价格 |
131,072-word X 9-bit High Speed CMOS Static RAM | |
CXK591000M-55LL | SONY |
获取价格 |
131,072-word X 9-bit High Speed CMOS Static RAM | |
CXK591000M-70LL | SONY |
获取价格 |
131,072-word X 9-bit High Speed CMOS Static RAM | |
CXK591000TM | SONY |
获取价格 |
131,072-word X 9-bit High Speed CMOS Static RAM | |
CXK591000TM/YM/M-10LL | ETC |
获取价格 |
131072-word x 9-bit High Speed CMOS Static RAM |