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CXK582000M

更新时间: 2024-02-13 15:47:55
品牌 Logo 应用领域
索尼 - SONY /
页数 文件大小 规格书
11页 207K
描述
262144-word X 8-bit High Speed CMOS Static RAM

CXK582000M 数据手册

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CXK582000TM/YM/M-85LL/10LL  
Preliminary  
262144-word × 8-bit High Speed CMOS Static RAM  
For the availability of this product, please contact the sales office.  
Description  
CXK582000TM  
CXK582000YM  
The CXK582000TM/YM/M is a high speed CMOS  
static RAM organized as 262144-words by 8 bits.  
32 pin TSOP (PIastic)  
32 pin TSOP (PIastic)  
A
polysilicon TFT cell technology realized  
extremely low stand-by current and higher data  
retention stability.  
Special feature are low power consumption and  
high speed and board package line-up.  
The CXK582000TM/YM/M is a suitable RAM for  
portable equipment with battery back up.  
CXK582000M  
32 pin SOP (PIastic)  
Features  
Fast access time  
-85LL  
(Access time)  
85ns (Max.)  
100ns (Max.)  
40µA (Max.)  
24µA (Max.)  
-10LL  
Low standby current  
Low data retention current  
Single +5V supply: 4.5V to 5.5V.  
Low voltage date retention : 2.0V (Min.)  
Broad package line-up  
Block Diagram  
CXK582000TM/YM  
8mm × 20mm 32 pin  
A10  
A11  
A9  
TSOP Package  
525mil 32 pin  
SOP Package  
CXK582000M  
A8  
VCC  
Memory  
Matrix  
2048 × 1024  
A13  
Row  
Decoder  
Buffer  
A15  
A17  
A16  
A14  
A12  
A7  
GND  
Function  
262144 word x 8 bit static RAM  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
Structure  
I /O Gate  
Column  
Decoder  
Silicon gate CMOS IC  
Buffer  
Buffer  
OE  
WE  
I /O Buffer  
CE1  
CE2  
I/O1  
I/O8  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E94234-ST  

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