生命周期: | Active | 零件包装代码: | DIP |
包装说明: | DIP, | 针数: | 24 |
Reach Compliance Code: | unknown | 风险等级: | 5.79 |
最长访问时间: | 120 ns | JESD-30 代码: | R-PDIP-T24 |
长度: | 32.1 mm | 内存密度: | 16384 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 24 |
字数: | 2048 words | 字数代码: | 2000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 2KX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 认证状态: | Not Qualified |
座面最大高度: | 5 mm | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 15.24 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CXK5816PN-12L | ETC |
获取价格 |
x8 SRAM |
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CXK5816PN-15 | ETC |
获取价格 |
x8 SRAM |
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CXK5816PN-15L | ETC |
获取价格 |
x8 SRAM |
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CXK582000M | SONY |
获取价格 |
262144-word X 8-bit High Speed CMOS Static RAM |
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CXK582000M-10LL | SONY |
获取价格 |
262144-word X 8-bit High Speed CMOS Static RAM |
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CXK582000M-85LL | SONY |
获取价格 |
262144-word X 8-bit High Speed CMOS Static RAM |
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CXK582000TM | SONY |
获取价格 |
262144-word X 8-bit High Speed CMOS Static RAM |
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CXK582000TM/YM/M-10LL | ETC |
获取价格 |
262144-word x 8-bit High Speed CMOS Static RAM |
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CXK582000TM/YM/M-85LL | ETC |
获取价格 |
262144-word x 8-bit High Speed CMOS Static RAM |
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CXK582000TM-10LL | SONY |
获取价格 |
262144-word X 8-bit High Speed CMOS Static RAM |
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