Datasheet > 存储 > SRAM> CXK581000ATM-55LL

CXK581000ATM-55LL

更新时间： 2024-09-19 22:11:39

品牌	Logo	应用领域
索尼 - SONY		/
页数	文件大小	规格书
12页	290K
描述
131072-word x 8-bit High Speed CMOS Static RAM

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

CXK581000ATM-55LL 数据手册

浏览型号CXK581000ATM-55LL的Datasheet PDF文件第2页

浏览型号CXK581000ATM-55LL的Datasheet PDF文件第3页

浏览型号CXK581000ATM-55LL的Datasheet PDF文件第4页

浏览型号CXK581000ATM-55LL的Datasheet PDF文件第5页

浏览型号CXK581000ATM-55LL的Datasheet PDF文件第6页

浏览型号CXK581000ATM-55LL的Datasheet PDF文件第7页

-55LL/70LL/10LL

-55SL/70SL/10SL

CXK581000ATM/AYM/AM/AP

131072-word × 8-bit High Speed CMOS Static RAM

For the availability of this product, please contact the sales office.

Description

CXK581000ATM

CXK581000AYM

The CXK581000ATM/AYM/AM/AP is a high speed

CMOS static RAM organized as 131072-words by

8 bits.

32 pin TSOP (Plastic)

A polysilicon TFT cell technology realized extremely low

stand- by current and higher data retention stability.

Special feature are low power consumption, high

speed and broad package line-up.

The CXK581000ATM/AYM/AM/AP ia a suitable

RAM for portable equipment with battery back up.

CXK581000AM

CXK581000AP

32 pin SOP (Plastic)

32 pin DIP (Plastic)

Features

• Fast access time:

CXK581000ATM/AYM/AM/AP

-55LL/55SL

(Access time)

55ns (Max.)

70ns (Max.)

100ns (Max.)

-70LL/70SL

-10LL/10SL

• Low standby current:

CXK581000ATM/AYM/AM/AP

-55LL/70LL/10LL

Block Diagram

20µA (Max.)

12µA (Max.)

-55SL/70SL/10SL

A10

A11

• Low data retention current

CXK581000ATM/AYM/AM/AP

-55LL/70LL/10LL

A13

VCC

Memory

Matrix

1024 × 1024

Row

Decoder

Buffer

12µA (Max.)

4µA (Max.)

A15

A16

GND

-55SL/70SL/10SL

A14

A12

• Single +5V supply: +5V ±10%

• Low voltage data retention: 2.0V (Min.)

• Broad package line-up

• CXK581000ATM/AYM

I/O Gate

Column

Decoder

Buffer

8mm × 20mm 32 pin TSOP package

• CXK581000AM

• CXK581000AP

525mil 32 pin SOP package

600mil 32 pin DIP package

Buffer

Functions

I/O Buffer

131072-word × 8-bit static RAM

CE1

CE2

I/O 1

I/O 8

Structure

Silicon gate CMOS IC

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E92756D53-PP

12 3 4 5 6 7...12

中文翻译

下载PDF

CXK581000ATM-55LL 替代型号

型号	品牌	替代类型	描述	数据表
KM681000ELT-5L	SAMSUNG	功能相似	128Kx8 bit Low Power CMOS Static RAM
CXK581000ATM-55SL	SONY	功能相似	131072-word x 8-bit High Speed CMOS Static RAM
K6T1008C2C-TB55	SAMSUNG	功能相似	128K x8 bit Low Power CMOS Static RAM

与CXK581000ATM-55LL相关器件

型号	品牌	获取价格	描述	数据表
CXK581000ATM-55SL	SONY	获取价格	131072-word x 8-bit High Speed CMOS Static RAM
CXK581000ATM-70LL	SONY	获取价格	131072-word x 8-bit High Speed CMOS Static RAM
CXK581000ATM-70LL-TL	SONY	获取价格	Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, PLASTIC, TSOP1-32
CXK581000ATM-70LLX	ETC	获取价格	x8 SRAM
CXK581000ATM-70SL	SONY	获取价格	131072-word x 8-bit High Speed CMOS Static RAM
CXK581000AYM	SONY	获取价格	131072-word x 8-bit High Speed CMOS Static RAM
CXK581000AYM-10LL	SONY	获取价格	131072-word x 8-bit High Speed CMOS Static RAM
CXK581000AYM-10LLB	ETC	获取价格	x8 SRAM
CXK581000AYM-10SL	SONY	获取价格	131072-word x 8-bit High Speed CMOS Static RAM
CXK581000AYM-55LL	SONY	获取价格	131072-word x 8-bit High Speed CMOS Static RAM

与CXK581000ATM-55LL相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

34
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

31
SL74HC10N：高性能三输入与非门解析
2024-09-03

104
AIC1781A 电池充电控制器深度解析
2024-09-03

100

产品中心

服务支持

精选活动

关于我们

帮助中心

CXK581000ATM-55LL

CXK581000ATM-55LL 数据手册

CXK581000ATM-55LL 替代型号

与CXK581000ATM-55LL相关器件

与CXK581000ATM-55LL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CXK581000ATM-55LL

CXK581000ATM-55LL 数据手册

CXK581000ATM-55LL 替代型号

与CXK581000ATM-55LL相关器件

与CXK581000ATM-55LL相关文章

您还可以找

您在本页遇到什么问题？