Datasheet > CXG1126EN-T9

CXG1126EN-T9

更新时间： 2024-11-13 19:19:51

品牌	Logo	应用领域
索尼 - SONY		ISM频段射频微波
页数	文件大小	规格书
5页	65K
描述
DP3T, 900MHz Min, 1500MHz Max, 0.75dB Insertion Loss-Max, PLASTIC, VQFN-10

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技术参数
数据手册

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CXG1126EN-T9 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	其他特性：	CMOS COMPATIBLE
构造：	COMPONENT	最大插入损耗：	0.75 dB
JESD-609代码：	e6/e4	最大工作频率：	1500 MHz
最小工作频率：	900 MHz	最高工作温度：	85 °C
最低工作温度：	-35 °C	射频/微波设备类型：	DP3T
端子面层：	TIN BISMUTH/PALLADIUM	最大电压驻波比：	1.2
Base Number Matches：	1

CXG1126EN-T9 数据手册

CXG1126EN

High Power DP3T Switch with Logic Control

For the availability of this product, please contact the sales office.

Description

10 pin VSON (Plastic)

The CXG1126EN is a high power DP3T switch

MMIC.This IC can be used in wireless communication

systems, for example, CDMA handsets with GPS.

The CXG1126EN can be operated by the CMOS

control. The Sony’s GaAs JFET process is used for

low insertion loss and on-chip logic circuit.

Features

• Low insertion loss: 0.25dB @900MHz,

0.35dB @1.5GHz

• High linearity: IIP3 (Typ.) = 70dBm

• 1 CMOS compatible control line

• Small package size: 10-pin VSON

Applications

• Dual-band cellular handsets

• CMDA with GPS, dual-band CDMA

Structure

GaAs J-FET MMIC

Absolute Maximum Ratings (Ta = 25°C)

• Bias voltage

V^DD

Vctl

• Control voltage

• Operating temperature Topr

• Storage temperature Tstg

–35 to +85

–65 to +150

°C

GaAs MMICs are ESD sensitive devices. Special handling precautions are required.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E01713B2X-PS

12 3 4 5

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