Datasheet > CXG1100TN-T2

CXG1100TN-T2

更新时间： 2024-02-05 12:27:40

品牌	Logo	应用领域
索尼 - SONY		ISM频段射频微波光电二极管
页数	文件大小	规格书
4页	58K
描述
DPDT, 0.6dB Insertion Loss-Max, PLASTIC, TSSOP-10

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技术参数
数据手册

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CXG1100TN-T2 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.13	特性阻抗：	50 Ω
构造：	COMPONENT	最大插入损耗：	0.6 dB
JESD-609代码：	e6/e4	最高工作温度：	85 °C
最低工作温度：	-35 °C	射频/微波设备类型：	DPDT
端子面层：	TIN BISMUTH/PALLADIUM	最大电压驻波比：	1.4
Base Number Matches：	1

CXG1100TN-T2 数据手册

CXG1100TN

High Power DPDT Switch with Logic Control

For the availability of this product, please contact the sales office.

Description

10 pin TSSOP (Plastic)

The CXG1100TN is a high power DPDT switch MMIC.

This IC can be used in wireless communi-cation

systems, for example, dual-band CDMA handsets.

The CXG1100TN can be operated by CMOS control.

The Sony’s JFET process is used for low insertion

loss and on-chip logic circuit.

Features

• Low insertion loss: 0.35dB @900MHz

• High linearity: IIP3 (Typ.) = 60dBm

• 1 CMOS compatible control line

• Small package size: 10-pin TSSOP

Applications

• Dual band cellular handsets

• CDMA and GPS, dual band CDMA

Structure

GaAs J-FET MMIC

Absolute Maximum Ratings (Ta = 25°C)

• Bias voltage

V^DD

Vctl

• Control voltage

• Operating temperature Topr

• Storage temperature Tstg

–35 to +85

°C

–65 to +150 °C

GaAs MMICs are ESD sensitive devices. Special handling precautions are required.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E01433C2X-PS

12 3 4

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