Datasheet > CXG1030N

CXG1030N

更新时间： 2022-11-25 16:44:05

品牌	Logo	应用领域
索尼 - SONY		放大器功率放大器
页数	文件大小	规格书
5页	144K
描述
Power Amplifier for PHS

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CXG1030N 数据手册

CXG1030N

Power Amplifier for PHS

Description

16 pin SSOP (Plastic)

The CXG1030N is a power amplifier for PHS. This

IC is designed using the Sony’s GaAs J-FET process

and operates at a single power supply.

Features

• Output power

21 dBm

3.0 V

• Positive power supply

• Low current consumption

• High power gain

170 mA

39 dB Typ.

Absolute Maximum Ratings (Ta=25 °C)

• Small mold package 16-pin SSOP

• Supply voltage

VDD

• Voltage between gate and source

Structure

Vgs0

1.5

500

GaAs J-FET MMIC

• Drain current

IDD

• Power dissipation

• Channel temperature

Tch

175

°C

• Operating temperature Top

• Storage temperature

–35 to +85

°C

Tstg –65 to +150 °C

Electrical Characteristics

VDD=3.0 V, VCTL=2.0 V, f=1.90 GHz

(Ta=25 °C)

Item

¹Current consumption

¹Gate voltage adjustment value

Output power

Symbol

IDD

Min.

Typ.

170

0.4

Max.

0.8

Unit

VGG2

POUT

dBm

²Power gain

²Adjacent channel leak power ratio

(600 kHz ±100 kHz)

ACPR600

–59

–54

dBc

Values where VGG1 and VGG2 are adjusted so that IDD becomes 170 mA when 21.0 dBm is output.

When 21.0 dBm is output.

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

—1—

E96706-TE

12 3 4 5

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