CXA3010Q

更新时间： 2024-09-23 22:12:19

品牌	Logo	应用领域
索尼 - SONY		驱动电子器件驱动程序和接口过滤器接口集成电路放大器数据分配系统
页数	文件大小	规格书
26页	310K
描述
Read/Write Amplifier (with Built-in Filters) for FDDs

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CXA3010Q 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	QFP, QFP32,.35SQ,32	针数：	32
Reach Compliance Code：	unknown	风险等级：	5.82
Is Samacsys：	N	驱动类型：	FLOPPY
接口集成电路类型：	READ WRITE AMPLIFIER CIRCUIT	JESD-30 代码：	S-PQFP-G32
长度：	7 mm	信道数量：	2
功能数量：	1	端子数量：	32
最高工作温度：	75 °C	最低工作温度：	-20 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	QFP
封装等效代码：	QFP32,.35SQ,32	封装形状：	SQUARE
封装形式：	FLATPACK	电源：	5 V
认证状态：	Not Qualified	座面最大高度：	1.85 mm
子类别：	Drive Electronics	最大压摆率：	36 mA
最大供电电压：	6 V	最小供电电压：	4.4 V
标称供电电压：	5 V	表面贴装：	YES
技术：	BIPOLAR	温度等级：	COMMERCIAL EXTENDED
端子形式：	GULL WING	端子节距：	0.8 mm
端子位置：	QUAD	宽度：	7 mm
Base Number Matches：	1

CXA3010Q 数据手册

CXA3010Q

Read/Write Amplifier (with Built-in Filters) for FDDs

For the availability of this product, please contact the sales office.

Description

32 pin QFP (Plastic)

The CXA3010Q is a monolithic IC designed for use

with three-mode Floppy Disk Drives, and contains a

read circuit (with a four-mode filter system), a write

circuit, an erase circuit, and a supply voltage

detection circuit, all on a single chip.

Features

• Single 5V power supply

• Filter system can be switched among four modes:

Applications

1M, 1.6M/2M, which are each inner track/outer

Three-mode FDDs

track

• Filter characteristics can be set to Chebyshev

Structure

(1dB ripple) for 1.6M, 2M/inner track only, and to

Bipolar silicon monolithic IC

Butterworth for the other modes

• A custom selection can be made between

Absolute Maximum Ratings (Ta = 25°C)

Chebyshev (1dB ripple) and Butterworth for the

• Supply voltage

• Operating temperature Topr –20 to +75

• Storage temperature Tstg –65 to +150

• Allowable power dissipation

V^CC

7.0

°C

filter characteristics for 1.6M, 2M/inner track only

• Permits customization of the fc ratio

• Low preamplifier input conversion noise voltage of

√

2.0nV/ Hz (typ.) keeps read data output jitter to a

500

minimum

• Digital signal input pin Input voltage

–0.5 to VCC + 0.3 V

• Preamplifier voltage gain can be switched between

39dB and 45dB

• Power ON output voltage applied VCC + 0.3

• In inner track mode (OTF = Low), the voltage gain

is boosted by 3dB, making it possible to minimize

peak shift in inner tracks.

• Erase output voltage applied

• Write head voltage applied

VCC + 0.3

• Write current

mAo-p

• Time domain filter can be switched between two

modes: 1M, 1.6M/2M

• Erase current

• Power on output current

• Write current can be switched among three

modes: 1M/1.6M/2M. The inner/outer track current

ratio is fixed for each mode, but can be

customized.

Operating Conditions

Supply voltage

4.4 to 6.0

• Erase current can be set by an external resistor,

and remains constant. In addition, the current rise

time Tr and fall time Tf are determined according

to the head inductance and current. (Refer to

page 20.)

• Damping resistor can be built in. Resistance can

be customized between 2kΩ and 15kΩ in 1kΩ

steps. A damping resistor can not be connected to

this IC, however.

• Supply voltage detection circuit

Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E94Y32A52-ST

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中文翻译

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