Datasheet > CVG640

CVG640

更新时间： 2024-01-09 10:20:01

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	45K
描述
TRANSISTOR \| BJT \| PNP \| 135V V(BR)CEO \| 1A I(C) \| TO-237

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技术参数
数据手册

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CVG640 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.69	Is Samacsys：	N
最大集电极电流 (IC)：	1 A	配置：	Single
最小直流电流增益 (hFE)：	15	JESD-609代码：	e0
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	2.5 W	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

CVG640 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN/PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL

TRANSISTORS

CVG639 (NPN)

CVG640 (PNP)

TO-237

EBC

Driver Stages of Audio Amplifier Application

ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

150

135

5.0

1.0

UNITS

Collector -Base Voltage

Collector -Emitter Voltage

Emitter -Base Voltage

Collector Current Continuous

Peak

ICM

1.5

Base Current Continuous

Peak

IBM

100

200

Power Dissipation@ Ta=25 deg C

Derate Above 25 deg C

Power Dissipation@ Tc=25 deg C

Derate Above 25 deg C

Operating & Storage Junction

Temperature Range

750

6.0

2.5

mW/deg C

deg C

Tj, Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

VALUE

DESCRIPTION

SYMBOL

TEST CONDITION

UNITS

Min

135

150

5.0

Max

Collector -Emitter Voltage

Collector -Base Voltage

Emitter-Base Voltage

VCEO

VCBO

VEBO

ICBO

IC=10mA, IB=0

IC=100uA.IE=0

IE=10uA, IC=0

VCB=30V, IE=0

Collector-Cut off Current

100

1.0

0.5

VCB=30V, IE=0, Ta=125 deg C

Base Emitter on Voltage

VBE(on) * IC=500mA, VCE=2V

Collector Emitter Saturation Voltage VCE(Sat) * IC=500mA, IB=50mA

DC Current Gain

hFE

IC=5mA, VCE=2V

IC=150mA,VCE=2V *

IC=500mA,VCE=2V *

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

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