Datasheet > CVFD20065A

CVFD20065A

更新时间： 2022-02-26 14:21:14

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	997K
描述
Silicon Carbide Schottky Diode

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数据手册

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CVFD20065A 数据手册

CVFD20065A

V_RRM

650 V

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) = 26 A

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀꢀ 62ꢀnC

Z-Rec^®RectifieR

Features

Package

•ꢀ 650-VoltꢀSchottkyꢀRectiﬁer

•ꢀ Reduced V_FforꢀImprovedꢀEfﬁciency

•ꢀ HighꢀHumidityꢀResistance

•ꢀ ZeroꢀForwardꢀandꢀReverseꢀRecoveryꢀVoltage

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

TO-220-2

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ PowerꢀInverters

•ꢀ MotorꢀDrives

CVFD20065A

TO-220-2

CVFD20065

•ꢀ EVꢀChargers

•ꢀ PowerꢀFactorꢀCorrection

•ꢀ ServerꢀPowerꢀSuppliesꢀ

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀPeakꢀBlockingꢀVoltage

Value Unit

Test Conditions

Note

V_RRM

650

V_RSM

V_DC

T_C=25˚C

T_C=135˚C

T_C=149˚C

I_F

ContinuousꢀForwardꢀCurrentꢀꢀꢀꢀꢀꢀꢀ

61.5

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

I_FRM

I_FSM

I_F,Max

P_tot

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀCurrent

PowerꢀDissipation

206

180

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀPulse

1400

1100

T_C=25˚C,ꢀt_P=10 ms,ꢀPulse

T_C=110˚C,ꢀt_P=10 ms,ꢀPulse

187.5

T_C=25˚C

T_C=110˚C

˚C

-55 to

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

TO-220ꢀMountingꢀTorque

8.8

Nm M3ꢀScrew

lbf-in 6-32ꢀScrew

CVFD20065A Rev. B

12 3 4 5 6

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