Datasheet > CUHS20F30

CUHS20F30

更新时间： 2024-11-22 14:58:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	247K
描述
30 V/2 A Schottky Barrier Diode, SOD-323HE(US2H)

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CUHS20F30 数据手册

CUHS20F30

Schottky Barrier Diode Silicon Epitaxial

CUHS20F30

1. Applications

•

High-Speed Switching

2. Packaging and Internal Circuit

1: Cathode

2: Anode

US2H

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Junction temperature

(Note 1)

(Note 2)

IFSM

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Note 2: Pulse width 10 ms

Start of commercial production

2019-04

Toshiba Electronic Devices & Storage Corporation

2019-09-20

Rev.3.0

12 3 4 5

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