Datasheet > CUHS15S60

CUHS15S60

更新时间： 2023-12-20 18:45:30

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	243K
描述
60 V/1.5 A Schottky Barrier Diode, SOD-323HE(US2H)

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CUHS15S60 数据手册

CUHS15S60

Schottky Barrier Diode Silicon Epitaxial

CUHS15S60

1. Applications

•

High-Speed Switching

2. Packaging and Internal Circuit

1: Cathode

2: Anode

US2H

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Note

Rating

Unit

Reverse voltage

1.5

Average rectified current

(Note 1)

(Note 2)

Non-repetitive peak forward surge current

Junction temperature

IFSM

150

�

Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Note 2: Pulse width 10 ms

Start of commercial production

2020-11

Toshiba Electronic Devices & Storage Corporation

2020-12-23

Rev.1.0

12 3 4 5

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