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CUDD16-04C PDF预览

CUDD16-04C

更新时间: 2024-11-24 22:28:51
品牌 Logo 应用领域
CENTRAL 整流二极管高压超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
2页 89K
描述
ULTRA FAST RECOVERY RECTIFIERS DUAL, COMMON CATHODE 16 AMP, 200 THRU 800 VOLTS

CUDD16-04C 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.33
Is Samacsys:N其他特性:HIGH RELIABILITY
应用:HIGH VOLTAGE ULTRA FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
最大非重复峰值正向电流:125 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:400 V最大反向恢复时间:0.025 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CUDD16-04C 数据手册

 浏览型号CUDD16-04C的Datasheet PDF文件第2页 
TM  
CUDD16-02C  
CUDD16-04C  
CUDD16-08C  
Central  
NEW  
Semiconductor Corp.  
ULTRA FAST RECOVERY RECTIFIERS  
DUAL, COMMON CATHODE  
FEATURES:  
16 AMP, 200 THRU 800 VOLTS  
• HIGH RELIABILITY  
• LOW FORWARD VOLTAGE  
• HIGH CURRENT CAPABILITY  
• HIGH SURGE CAPACITY  
• UL FLAMMABILITY CLASSIFICATION 94V-O  
• SUPERIOR LOT TO LOT CONSISTENCY  
• ULTRA FAST RECOVERY TIME  
• HIGH VOLTAGE  
D2PAK CASE  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CUDD16-02C Series types are a Silicon Ultra-Fast Recovery  
Rectifier designed for surface mount ultra fast switching applications requiring a low forward voltage  
drop. To order devices on 24mm Tape and Reel ( 800/13” Reel ), add TR13 suffix to part number.  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CUDD16 CUDD16 CUDD16  
-02C  
-04C  
-08C  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
400  
400  
280  
16  
800  
800  
560  
V
V
V
A
A
RRM  
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =100°C)  
I
C
O
Peak Forward Surge Current (8.3ms)  
Operating and Storage  
I
125  
FSM  
Junction Temperature  
T ,T  
-50 to +150  
°C  
J stg  
Typical Thermal Resistance  
Typical Thermal Resistance  
Q
Q
3.0  
°C/W  
°C/W  
JC  
50  
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
C
CUDD16-02C CUDD16-04C CUDD16-08C  
SYMBOL TEST CONDITIONS  
TYP  
MAX  
TYP  
MAX TYP MAX UNITS  
I
V =Rated V  
5.0  
250  
10  
500  
1.3  
1.1  
25  
10  
500  
mA  
mA  
V
R
R
RRM  
I
V =Rated V  
R
, T = 150°C  
R
RRM  
C
V
I =8.0A  
F
0.975  
0.895  
25  
1.5  
1.2  
50  
F
F
V
I =8.0A, T = 150°C  
V
F
C
t
I =0.5A, I =1.0A, I =0.25A  
RR  
ns  
pF  
rr  
C
F
R
V =4.0V, f=1.0MHz  
80  
80  
50  
J
R
354  

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