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CUDD16-02CLEADFREE PDF预览

CUDD16-02CLEADFREE

更新时间: 2024-11-21 15:30:07
品牌 Logo 应用领域
CENTRAL 超快恢复二极管高压超快恢复二极管快速恢复二极管
页数 文件大小 规格书
2页 542K
描述
Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, D2PAK-3

CUDD16-02CLEADFREE 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.52其他特性:HIGH RELIABILITY
应用:HIGH VOLTAGE ULTRA FAST RECOVERY外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PSSO-G2
JESD-609代码:e3最大非重复峰值正向电流:125 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.025 µs表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CUDD16-02CLEADFREE 数据手册

 浏览型号CUDD16-02CLEADFREE的Datasheet PDF文件第2页 
CUDD16-02C  
CUDD16-04C  
CUDD16-08C  
www.centralsemi.com  
SURFACE MOUNT, DUAL  
COMMON CATHODE, ULTRA FAST  
RECOVERY SILICON RECTIFIERS  
16 AMPS, 200 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CUDD16-02C  
Series types are Silicon Ultra-Fast Recovery Rectifiers  
designed for surface mount ultra fast switching  
applications requiring a low forward voltage drop. To  
order devices on 24mm Tape and Reel (800/13” Reel),  
add TR13 suffix to part number.  
MARKING: FULL PART NUMBER  
D2PAK CASE  
FEATURES:  
UL Flammability Classification 94V-O  
Superior Lot To Lot Consistency  
High Reliability  
Low Forward Voltage  
High Current Capability  
High Surge Capacity  
Ultra Fast Recovery Time  
High Voltage  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL CUDD16-02C CUDD16-04C CUDD16-08C  
UNITS  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
200  
200  
140  
400  
400  
280  
16  
800  
800  
560  
V
V
V
A
A
RRM  
V
R
RMS Reverse Voltage  
V
R(RMS)  
Average Forward Current (T =100°C)  
C
Peak Forward Surge Current, tp=8.3ms  
I
O
I
125  
FSM  
Operating and Storage  
Junction Temperature  
T
T
-65 to +150  
°C  
J, stg  
Typical Thermal Resistance  
Typical Thermal Resistance  
Θ
3.0  
50  
°C/W  
°C/W  
JC  
JA  
Θ
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
C
CUDD16-02C  
CUDD16-04C  
CUDD16-08C  
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
5.0  
TYP  
MAX  
10  
TYP  
MAX  
10  
UNITS  
µA  
µA  
V
I
I
V =Rated V  
-
-
-
-
-
-
R
R
RRM  
RRM  
V =Rated V  
, T = 150°C  
250  
0.975  
0.895  
25  
500  
1.3  
1.1  
25  
500  
1.5  
1.2  
50  
R
R
C
V
V
I =8.0A  
-
-
-
F
F
F
I =8.0A, T = 150°C  
-
-
-
V
F
C
t
I =0.5A, I =1.0A, I =0.25A  
-
-
-
ns  
rr  
F
R
rr  
C
V =4.0V, f=1.0MHz  
80  
-
80  
-
50  
-
pF  
J
R
R4 (19-February 2010)  

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