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CUD6-02CBKTIN/LEAD PDF预览

CUD6-02CBKTIN/LEAD

更新时间: 2024-11-21 13:01:51
品牌 Logo 应用领域
CENTRAL 快速恢复二极管
页数 文件大小 规格书
2页 125K
描述
Rectifier Diode, 6A, 200V V(RRM),

CUD6-02CBKTIN/LEAD 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.85 V
JESD-609代码:e0最大非重复峰值正向电流:70 A
最高工作温度:150 °C最大输出电流:6 A
最大重复峰值反向电压:200 V最大反向恢复时间:0.035 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

CUD6-02CBKTIN/LEAD 数据手册

 浏览型号CUD6-02CBKTIN/LEAD的Datasheet PDF文件第2页 
TM  
CUD6-02A  
Central  
SURFACE MOUNT  
ULTRA-FAST RECOVERY  
RECTIFIER  
Semiconductor Corp.  
DUAL, COMMON ANODE  
6.0 AMPS, 200 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CUD6-02A,  
Silicon Ultra-Fast Recovery Rectifier is a high  
quality, well constructed, highly reliable  
component designed for use in all types of  
commercial, industrial, entertainment, computer,  
and automotive applications.  
DPAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
UNIT  
Peak Repetitive Reverse Voltage  
Peak Non Repetitive Surge Reverse Voltage  
V
V
200  
200  
6.0  
10  
70  
V
V
A
A
A
RRM  
RSM  
Average Forward Current (T =130°C)  
I
I
I
C
O
RMS Forward Current Per Diode  
F(RMS)  
FSM  
Peak Forward Surge Current Per Diode (tp=10ms)  
Critical Rate of Rise of Reverse Voltage  
dV/dt  
10,000  
V/µs  
Operating and Storage  
Junction Temperature  
T ,T  
stg  
-65 to +150  
5.0  
°C  
°C/W  
J
Thermal Resistance, Per Diode  
Θ
JC  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
V =200V  
MIN  
MAX  
UNIT  
I
I
V
V
20  
500  
1.25  
0.85  
35  
µA  
µA  
V
V
ns  
R
R
F
F
R
V =200V, T =100°C  
R
C
I =10A  
F
I =5.0A, T =100°C  
F
C
t
V =30V, IF=1.0A, di/dt=50A/ms  
rr  
R
R0 ( 20-September 2001)  

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