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CUD6-02CBKLEADFREE PDF预览

CUD6-02CBKLEADFREE

更新时间: 2024-11-21 13:00:51
品牌 Logo 应用领域
CENTRAL 快速恢复二极管
页数 文件大小 规格书
2页 125K
描述
Rectifier Diode, 1 Phase, 2 Element, 3A, 200V V(RRM), Silicon,

CUD6-02CBKLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.44
其他特性:HIGH RELIABILITY应用:ULTRA FAST RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:75 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向电流:5 µA
最大反向恢复时间:0.035 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

CUD6-02CBKLEADFREE 数据手册

 浏览型号CUD6-02CBKLEADFREE的Datasheet PDF文件第2页 
TM  
CUD6-02A  
Central  
SURFACE MOUNT  
ULTRA-FAST RECOVERY  
RECTIFIER  
Semiconductor Corp.  
DUAL, COMMON ANODE  
6.0 AMPS, 200 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CUD6-02A,  
Silicon Ultra-Fast Recovery Rectifier is a high  
quality, well constructed, highly reliable  
component designed for use in all types of  
commercial, industrial, entertainment, computer,  
and automotive applications.  
DPAK CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
UNIT  
Peak Repetitive Reverse Voltage  
Peak Non Repetitive Surge Reverse Voltage  
V
V
200  
200  
6.0  
10  
70  
V
V
A
A
A
RRM  
RSM  
Average Forward Current (T =130°C)  
I
I
I
C
O
RMS Forward Current Per Diode  
F(RMS)  
FSM  
Peak Forward Surge Current Per Diode (tp=10ms)  
Critical Rate of Rise of Reverse Voltage  
dV/dt  
10,000  
V/µs  
Operating and Storage  
Junction Temperature  
T ,T  
stg  
-65 to +150  
5.0  
°C  
°C/W  
J
Thermal Resistance, Per Diode  
Θ
JC  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
V =200V  
MIN  
MAX  
UNIT  
I
I
V
V
20  
500  
1.25  
0.85  
35  
µA  
µA  
V
V
ns  
R
R
F
F
R
V =200V, T =100°C  
R
C
I =10A  
F
I =5.0A, T =100°C  
F
C
t
V =30V, IF=1.0A, di/dt=50A/ms  
rr  
R
R0 ( 20-September 2001)  

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