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CTLDM8120-M832DTR PDF预览

CTLDM8120-M832DTR

更新时间: 2024-11-16 19:57:15
品牌 Logo 应用领域
CENTRAL 开关脉冲光电二极管晶体管
页数 文件大小 规格书
2页 466K
描述
Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE TLM832D, 8 PIN

CTLDM8120-M832DTR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-N8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.92外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.86 A最大漏极电流 (ID):0.86 A
最大漏源导通电阻:0.15 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-N8湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):225
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1.65 W
最大脉冲漏极电流 (IDM):4 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

CTLDM8120-M832DTR 数据手册

 浏览型号CTLDM8120-M832DTR的Datasheet PDF文件第2页 
CTLDM8120-M832D  
SURFACE MOUNT  
DUAL, P-CHANNEL  
ENHANCEMENT-MODE  
SILICON MOSFETS  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR  
CTLDM8120-M832D is an Enhancement-mode Dual  
P-Channel Field Effect Transistor, manufactured by the  
P-Channel DMOS Process, designed for high speed  
pulsed amplifier and driver applications. This MOSFET  
offers Low r  
and Low Threshold Voltage.  
DS(ON)  
MARKING CODE: CFV  
• Device is Halogen Free by design  
TLM832D CASE  
FEATURES:  
ESD protection up to 2kV  
APPLICATIONS:  
Switching Circuits  
DC - DC Converters  
Battery powered portable devices  
Low r  
High current (I =0.95A)  
(0.24Ω MAX @ V =1.8V)  
DS(ON) GS  
D
Logic level compatibility  
MAXIMUM RATINGS: (T =25°C)  
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current (Steady State)  
Continuous Drain Current, t<5.0s  
Continuous Source Current (Body Diode)  
Maximum Pulsed Drain Current, tp=10μs  
Maximum Pulsed Source Current, tp=10μs  
Power Dissipation (Note 1)  
SYMBOL  
UNITS  
V
V
A
A
A
A
A
A
V
V
I
I
20  
8.0  
0.86  
0.95  
0.36  
4.0  
DS  
GS  
D
D
I
S
I
I
P
DM  
SM  
4.0  
1.65  
-65 to +150  
76  
W
°C  
°C/W  
D
T
Operating and Storage Junction Temperature  
Thermal Resistance (Note 1)  
T
J, stg  
Θ
JA  
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
1.0  
MAX  
50  
UNITS  
nA  
nA  
V
V
V
Ω
Ω
Ω
Ω
nC  
nC  
nC  
S
pF  
pF  
I
I
, I  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
=8.0V, V =0  
GSSF GSSR  
DSS  
GS  
DS  
GS  
DS  
=20V, V =0  
GS  
5.0  
500  
BV  
V
V
r
r
r
r
Q
Q
Q
=0, I =250μA  
I =250μA  
=0, I =360mA  
20  
24  
DSS  
GS(th)  
SD  
DS(ON)  
DS(ON)  
DS(ON)  
DS(ON)  
D
=V  
0.45  
0.76  
1.0  
DS GS, D  
0.9  
GS  
GS  
GS  
GS  
GS  
DS  
DS  
DS  
DS  
DS  
DS  
DS  
DD  
DD  
S
=4.5V, I =0.95A  
0.085  
0.085  
0.130  
0.190  
3.56  
0.150  
0.142  
0.200  
0.240  
D
=4.5V, I =0.77A  
D
=2.5V, I =0.67A  
D
=1.8V, I =0.2A  
=10V, V =4.5V, I =1.0A  
=10V, V =4.5V, I =1.0A  
=10V, V =4.5V, I =1.0A  
GS  
=10V, I =810mA  
=16V, V =0, f=1.0MHz  
=16V, V =0, f=1.0MHz  
D
GS  
GS  
g(tot)  
gs  
D
D
D
0.36  
1.52  
gd  
FS  
rss  
iss  
oss  
g
2.0  
D
C
C
C
t
t
80  
200  
60  
20  
25  
GS  
GS  
=16V, V =0, f=1.0MHz  
pF  
ns  
ns  
GS  
=10V, V =4.5V, I =0.95A, R =6.0Ω  
on  
off  
GS  
D
D
G
G
=10V, V =4.5V, I =0.95A, R =6.0Ω  
GS  
Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2  
R2 (2-August 2011)  

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