是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | 1.50 X 2 MM, 0.40 MM HEIGHT, TLM621H, 6 PIN |
针数: | 6 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 0.86 A |
最大漏极电流 (ID): | 0.86 A | 最大漏源导通电阻: | 0.15 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-N6 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1.6 W | 最大脉冲漏极电流 (IDM): | 4 A |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CTLDM8120-M832D | CENTRAL |
获取价格 |
SURFACE MOUNT DUAL, P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS | |
CTLDM8120-M832DBK | CENTRAL |
获取价格 |
Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 2-Element, P-Channel, Silicon, Me | |
CTLDM8120-M832DBKLEADFREE | CENTRAL |
获取价格 |
Transistor | |
CTLDM8120-M832DBKPBFREE | CENTRAL |
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Transistor, | |
CTLDM8120-M832DS | CENTRAL |
获取价格 |
Small Signal Field-Effect Transistor, 0.86A I(D), 20V, 2-Element, P-Channel, Silicon, Meta | |
CTLDM8120-M832DTR | CENTRAL |
获取价格 |
Power Field-Effect Transistor, 0.86A I(D), 20V, 0.15ohm, 2-Element, P-Channel, Silicon, Me | |
CTLF24P1GF | Central Technologies |
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LAN Filters - 1 Gigabit Ethernet | |
CTLF24P1GF-001 | Central Technologies |
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LAN Filters - 1 Gigabit Ethernet | |
CTLF24P1GF-002 | Central Technologies |
获取价格 |
LAN Filters - 1 Gigabit Ethernet | |
CTLF24S1GF | Central Technologies |
获取价格 |
LAN Filters - 1 Gigabit Ethernet |