CTLDM8002A-M621HBK

更新时间： 2024-09-29 13:07:07

品牌	Logo	应用领域
CENTRAL		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
2页	616K
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数据手册

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CTLDM8002A-M621HBK 数据手册

CTLDM8002A-M621

SURFACE MOUNT

P-CHANNEL

ENHANCEMENT-MODE

SILICON MOSFET

www.centralsemi.com

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CTLDM8002A-M621 is a Silicon P-Channel

Enhancement-mode MOSFET in a small, thermally

efficient, TLM™ 2x1mm package.

MARKING CODE: CN

FEATURES:

• Low r

DS(on)

• Low V

TLM621 CASE

DS(on)

• Low Threshold Voltage

APPLICATIONS:

• Load/Power Switches

• Fast Switching

• Logic Level Compatible

• Small TLM™ 2x1mm Package

• Power Supply Converter Circuits

• Battery Powered Portable Equipment

MAXIMUM RATINGS: (T =25°C)

Drain-Source Voltage

SYMBOL

UNITS

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

280

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Maximum Pulsed Source Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

280

1.5

0.9

-65 to +150

139

°C

°C/W

J, stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

, I

=20V, V =0

100

GSSF GSSR

=50V, V =0

1.0

μA

DSS

=50V, V =0, T =125°C

500

DSS

=10V, V =10V

500

D(ON)

=0, I =10μA

DSS

GS(th)

DS(ON)

I =250μA

1.0

2.5

1.5

0.15

1.3

2.5

4.0

3.0

5.0

DS GS, D

=10V, I =500mA

=5.0V, I =50mA

=0, I =115mA

=10V, I =500mA

DS(ON)

=10V, I =500mA, T =125°C

=5.0V, I =50mA

=5.0V, I =50mA, T =125°C

=10V, I =200mA

200

Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 33mm².

R1 (17-February 2010)

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