Datasheet > CTH4106NS-T52

CTH4106NS-T52

更新时间： 2024-11-22 01:24:23

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	559K
描述
N-Channel Enhancement MOSFET

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CTH4106NS-T52 数据手册

CTH4106NS-T52

N-Channel Enhancement MOSFET

Features

Description

The CTH4106NS –T52 uses high performance

Trench Technology to provide excellent RDS(ON)and

low gate charge which is suitable for most of the

synchronous buck converter applications .

Drain-Source Breakdown Voltage V_DSS= 60V

Drain-Source On-Resistance

_DS(ON)16m , at V_GS= 10V, I_D= 50A

•

Ω

•

Continuous Drain Current at T_C=25 I_D= 41A

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free

Applications

•

Notebook

High side switching

Power Management

Package Outline

Schematic

Drain

Gate

Source

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 1

12 3 4 5 6 7...11

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