Datasheet > CTH3004PS-T52

CTH3004PS-T52

更新时间： 2024-11-22 01:24:23

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	776K
描述
P-Channel Enhancement MOSFET

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数据手册

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CTH3004PS-T52 数据手册

CTH3004PS-T52

P-Channel Enhancement MOSFET

Features

Description

The CTH3004PS-T52 is the P-Channel logic

enhancement mode power field effect transistors

are produced using high cell density, DMOS trench

technology. This high density process is especially

tailored to minimize on-state resistance.

Drain-Source Breakdown Voltage V_DSS

-40

•

Drain-Source On-Resistance

_DS(ON)15m

Ω

, at V_GS= -10V, I_D= -12A

, at V_GS= -4.5V, I_D= -6A

R_DS(ON)18m

•

Continuous Drain Current at T_C=25 I_D=-30A

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free

Applications

•

Load Switch

DC/DC Converter

LCD Display inverter

Package Outline

Schematic

Drain

Gate

Source

CT Micro

Proprietary & Confidential

Rev 3

Jun, 2015

Page 1

12 3 4 5 6 7...11

中文翻译

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