Datasheet > CTH2303NS-T52

CTH2303NS-T52

更新时间： 2022-02-26 14:21:55

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	759K
描述
N-Channel Enhancement MOSFET

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CTH2303NS-T52 数据手册

CTH2303NS-T52

N-Channel Enhancement MOSFET

Features

Description

The CTH2303NS-T52 is the N-Channel logic

enhancement mode power field effect transistors

are produced using high cell density, DMOS trench

technology. This high density process is especially

tailored to minimize on-state resistance.

Drain-Source Breakdown Voltage V_DSS30V

Drain-Source On-Resistance

•

_DS(ON)26m

Ω

, at V_GS= 10V, I_D= 10A

, at V_GS= 4.5V, I_D= 7A

R_DS(ON)35m

•

Continuous Drain Current at T_C=25 I_D=23A

Advanced high cell density Trench Technology

RoHS Compliance & Halogen Free

ESD Protection

Applications

•

Power Management in Note book

Battery Powered System

DC/DC Converter

Package Outline

Schematic

Drain

Gate

Source

CT Micro

Proprietary & Confidential

Rev 2

Jun, 2015

Page 1

12 3 4 5 6 7...11

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