Datasheet > CT3401A-R3

CT3401A-R3

更新时间： 2024-09-22 01:25:47

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	574K
描述
P-Channel Enhancement MOSFET

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中文翻译

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数据手册

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CT3401A-R3 数据手册

CT3401A-R3

P-Channel Enhancement MOSFET

Features

Description

The CT3401A-R3 uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for low voltage

application.

• Drain-Source Breakdown Voltage V_DSS- 30 V

• Drain-Source On-Resistance

_DS(ON)33m

Ω

, at V_GS= - 10V, I_DS= - 4.2A

, at V_GS= - 4.5V, I_DS= - 4.0A

, at V_GS= - 2.5V, I_DS= - 1.0A

R_DS(ON)38m

R_DS(ON)51m

• Continuous Drain Current at T_A=25 I_D= - 4.2A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

Applications

• Power Management

• LCD Display inverter

• Load Switch

Package Outline

Schematic

Drain

Gate

Source

Gate

CT Micro

Proprietary & Confidential

Rev 2

Aug, 2015

Page 1

12 3 4 5 6 7...11

中文翻译

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