Datasheet > CT3331-R3

CT3331-R3

更新时间： 2024-09-22 01:24:23

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	2562K
描述
P-Channel Enhancement MOSFET

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CT3331-R3 数据手册

CT3331-R3

P-Channel Enhancement MOSFET

Features

Description

The CT3331-R3 uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for most of the synchronous

buck converter applications .

• Drain-Source Breakdown Voltage V_DSS- 200 V

• Drain-Source On-Resistance

_DS(ON)2.3

Ω

, at V_GS= - 10V, I_DS= - 0.2A

, at V_GS= - 4.5V, I_DS= - 0.2A

R_DS(ON)2.4

• Continuous Drain Current at T_A=25

I_D= - 0.4A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

• ESD Protection

Applications

• Switches

• Power supply circuits

• Motor controls

• Drivers

Package Outline

Schematic

Drain

Gate

Source

Gate

Source

CT Micro

Proprietary & Confidential

Rev 3

Oct, 2014

Page 1

12 3 4 5 6 7...11

中文翻译

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与CT3331-R3相关器件

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CT3334-50	ETC	获取价格	CONN TERMINATOR PLUG BNC 50 OHM
CT334	COTO	获取价格	Contact Form: 2a Load Voltage: 200V Maximum
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CT3340	ETC	获取价格	CONN ADAPT N PLUG TO SMA PLUG
CT3341	ETC	获取价格	CONN ADAPT PLUG-JACK BNC 50 OHM
CT3346	ETC	获取价格	CONN ADAPT BNC JACK TO N PLUG
CT3348	ETC	获取价格	CONN ADAPT BNC JACK TO N JACK