生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.24 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 30 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | 最大降落时间(tf): | 300000 ns |
门极发射器阈值电压最大值: | 6 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 250 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 385 ns |
标称接通时间 (ton): | 165 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CT30TM8 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 180A I(C) | SOT-186 | |
CT30TM-8 | RENESAS |
获取价格 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | |
CT30TM-8 | POWEREX |
获取价格 |
STROBE FLASHER USE | |
CT30TM-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE | |
CT30VM8 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 180A I(C) | TO-221 | |
CT30VM-8 | POWEREX |
获取价格 |
STROBE FLASHER USE | |
CT30VM-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE | |
CT30VM-8 | RENESAS |
获取价格 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR | |
CT30VS8 | ETC |
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TRANSISTOR | IGBT | N-CHAN | 400V V(BR)CES | 180A I(C) | TO-221 | |
CT30VS-8 | MITSUBISHI |
获取价格 |
STROBE FLASHER USE |