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CT30SM-12 PDF预览

CT30SM-12

更新时间: 2024-09-19 22:08:19
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
3页 39K
描述
GENERAL INVERTER . UPS USE

CT30SM-12 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.24
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):30 A集电极-发射极最大电压:600 V
配置:SINGLE最大降落时间(tf):300000 ns
门极发射器阈值电压最大值:6 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):385 ns
标称接通时间 (ton):165 nsBase Number Matches:1

CT30SM-12 数据手册

 浏览型号CT30SM-12的Datasheet PDF文件第2页浏览型号CT30SM-12的Datasheet PDF文件第3页 
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR  
CT30SM-12  
GENERAL INVERTER • UPS USE  
CT30SM-12  
OUTLINE DRAWING  
Dimensions in mm  
4.5  
15.9MAX.  
1.5  
r
φ 3.2  
2
4.4  
1.0  
5.45  
q
w
e
5.45  
0.6  
2.8  
4
w r  
q GATE  
w COLLECTOR  
e EMITTER  
r COLLECTOR  
q
¡VCES ................................................................................600V  
¡IC ......................................................................................... 30A  
¡High Speed Switching  
e
¡Low VCE Saturation Voltage  
TO-3P  
APPLICATION  
AC & DC motor controls, General purpose invert-  
ers, UPS, Power supply switching, Servo controls,  
etc.  
MAXIMUM RATINGS (Tc = 25°C)  
Symbol  
VCES  
VGES  
VGEM  
IC  
Parameter  
Collector-emitter voltage  
Gate-emitter voltage  
Peak gate-emitter voltage  
Collector current  
Conditions  
Ratings  
600  
Unit  
V
VGE = 0V  
VCE = 0V  
VCE = 0V  
±20  
V
±30  
V
30  
A
ICM  
Collector current (Pulsed)  
Maximum power dissipation  
Junction temperature  
Storage temperature  
Weight  
60  
A
PC  
250  
W
°C  
°C  
g
Tj  
–40 ~ +150  
–40 ~ +150  
4.8  
Tstg  
Typical value  
Feb.1999  

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