Datasheet > CT2312-R3

CT2312-R3

更新时间： 2024-11-11 01:25:47

品牌	Logo	应用领域
CTMICRO		/
页数	文件大小	规格书
11页	2073K
描述
N-Channel Enhancement MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CT2312-R3 数据手册

CT2312-R3

N-Channel Enhancement MOSFET

Features

Description

The CT2312-R3 uses high performance Trench

Technology to provide excellent R_DS(ON)and low gate

charge which is suitable for most of the synchronous

buck converter applications .

• Drain-Source Breakdown Voltage V_DSS20 V

• Drain-Source On-Resistance

_DS(ON)22m

Ω

, at V_GS= 4.5V, I_DS= 4.5A

, at V_GS= 2.5V, I_DS= 4.0A

R_DS(ON)27m

• Continuous Drain Current at

TA=25 I_D= 4.5A

• Advanced high cell density Trench Technology

• RoHS Compliance & Halogen Free

Applications

• Power Management

• Portable Equipment

• Load Switch

• DSC

Package Outline

Schematic

Drain

Gate

Source

Gate

Source

CT Micro

Proprietary & Confidential

Rev 4

Jun, 2015

Page 1

12 3 4 5 6 7...11

中文翻译

下载PDF

与CT2312-R3相关器件

型号	品牌	获取价格	描述	数据表
CT2321-R3	CTMICRO	获取价格	P-Channel Enhancement MOSFET
CT2323-R3	CTMICRO	获取价格	P-Channel Enhancement MOSFET
CT2330	ETC	获取价格	TEST LEAD BANANA TO KELVIN 39.4"
CT2338-100-0	ETC	获取价格	TEST LEAD BANANA TO PROBE 39.4"
CT2338-100-2	ETC	获取价格	TEST LEAD BANANA TO PROBE 39.4"
CT2338-150-0	ETC	获取价格	TEST LEAD BANANA TO PROBE 59.1"
CT2338-150-2	ETC	获取价格	TEST LEAD BANANA TO PROBE 59.1"
CT2-34	NAIS	获取价格	CT-2 CONNECTOR TERMINAL
CT-23-6A	BOURNS	获取价格	Turns-Counting Dial
CT-23-6M	BOURNS	获取价格	Turns-Counting Dial